TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage and High Current Gain
Product Overview
The TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage capabilities (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), and low noise (NF = 1dB typ.). It is complementary to the 2SA1163 and comes in a small package.
Product Attributes
- Brand: TOSHIBA
- Origin: Japan (implied by manufacturer)
- Material: Silicon
- Package: JEDEC TO-236MOD / JEITA SC-59 (2-3F1A)
- Weight: 0.012 g (typ.)
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = 120 V, IE = 0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 | 0.1 | A | ||
| DC current gain | hFE (Note) | VCE = 6 V, IC = 2 mA | 200 | 700 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC = 10 mA, IB = 1 mA | 0.3 | V | ||
| Transition frequency | fT | VCE = 6 V, IC = 1 mA | 100 | MHz | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 3.0 | pF | ||
| Noise figure | NF | VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k | 1.0 | 10 | dB |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 120 | V |
| Collector-emitter voltage | VCEO | 120 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Base current | IB | 20 | mA |
| Collector power dissipation | PC | 150 | mW |
| Junction temperature | Tj | 125 | C |
| Storage temperature range | Tstg | 55 to 125 | C |
2410121841_TOSHIBA-2SC2713-GR-LF_C2762675.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.