TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage and High Current Gain

Key Attributes
Model Number: 2SC2713-GR,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@2mA,6V
Transition Frequency(fT):
100MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
300mV@10mA,1mA
Type:
NPN
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
120V
Operating Temperature:
-
Mfr. Part #:
2SC2713-GR,LF
Package:
TO-236-3
Product Description

Product Overview

The TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage capabilities (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), and low noise (NF = 1dB typ.). It is complementary to the 2SA1163 and comes in a small package.

Product Attributes

  • Brand: TOSHIBA
  • Origin: Japan (implied by manufacturer)
  • Material: Silicon
  • Package: JEDEC TO-236MOD / JEITA SC-59 (2-3F1A)
  • Weight: 0.012 g (typ.)

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Collector cut-off currentICBOVCB = 120 V, IE = 00.1A
Emitter cut-off currentIEBOVEB = 5 V, IC = 00.1A
DC current gainhFE (Note)VCE = 6 V, IC = 2 mA200700
Collector-emitter saturation voltageVCE (sat)IC = 10 mA, IB = 1 mA0.3V
Transition frequencyfTVCE = 6 V, IC = 1 mA100MHz
Collector output capacitanceCobVCB = 10 V, IE = 0, f = 1 MHz3.0pF
Noise figureNFVCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k1.010dB

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Collector-base voltageVCBO120V
Collector-emitter voltageVCEO120V
Emitter-base voltageVEBO5V
Collector currentIC100mA
Base currentIB20mA
Collector power dissipationPC150mW
Junction temperatureTj125C
Storage temperature rangeTstg55 to 125C

2410121841_TOSHIBA-2SC2713-GR-LF_C2762675.pdf

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