High current NPN transistor UTC PZT1816G-S-AA3-R featuring fast switching speed and compact SOT-223 package design
Key Attributes
Model Number:
PZT1816G-S-AA3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
DC Current Gain:
140@500mA,5V
Transition Frequency(fT):
180MHz
Vce Saturation(VCE(sat)):
150mV
Type:
NPN
Pd - Power Dissipation:
1W
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
PZT1816G-S-AA3-R
Package:
SOT-223
Product Description
Product Overview
The UNISONIC PZT1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, and a small, slim package that facilitates compact set designs. With a high transition frequency (fT) and fast switching speed, this transistor is suitable for demanding electronic circuits.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Origin: Taiwan
- Product Type: NPN Planar Transistor
- Package: SOT-223
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | BVCBO | IC =10A, IE =0 | 120 | V | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC =1mA, RB= | 100 | V | ||
| Emitter-Base Breakdown Voltage | BVEBO | IE =10A, IC=0 | 6 | V | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC = 2A, IB =0.2A | 0.9 | 1.2 | V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC = 2A, IB=0.2A | 150 | 400 | mV | |
| Collector Cut-Off Current | ICBO | VCB = 100 V, IE =0 | 1 | A | ||
| Emitter Cut-Off Current | IEBO | VEB = 4V, IC=0 | 1 | A | ||
| DC Current Transfer Ratio (hFE1) | hFE1 | VCE = 5V, IC = 0.5A | 70 | 400 | ||
| DC Current Transfer Ratio (hFE2) | hFE2 | VCE =5V, IC = 3A | 40 | |||
| Transition Frequency | fT | VCE =10V, IC =0.5A | 180 | MHz | ||
| Output Capacitance | Cob | VCB =10V, IE =0A, f =1MHz | 40 | pF | ||
| Turn-on Time | tON | See test circuit | 100 | ns | ||
| Storage Time | tSTG | See test circuit | 900 | ns | ||
| Fall Time | tF | See test circuit | 50 | ns |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Collector-Base Voltage | VCBO | 120 | V |
| Collector-Emitter Voltage | VCEO | 100 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current DC | IC | 4 | A |
| Collector Current PULSE (Note 2) | IC | 8 | A |
| Power Dissipation | PD | 1 | W |
| Junction Temperature | TJ | +150 | C |
| Storage Temperature | TSTG | -40 ~ +150 | C |
1808271938_UTC-PZT1816G-S-AA3-R_C84886.pdf
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