High Voltage NPN Bipolar Transistor TOSHIBA 2SC2712-GR TE85L F for Low Frequency and Audio Amplifiers
Key Attributes
Model Number:
2SC2712-GR(TE85L,F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
70@2mA,6V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
250mV@100mA,10mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC2712-GR(TE85L,F
Package:
Mini-S(SC-59)
Product Description
Product Overview
The 2SC2712 is a silicon NPN epitaxial bipolar transistor, first produced in October 1982. It is designed for low-frequency amplifiers, audio frequency general-purpose amplification, and AM amplifiers. Key features include high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), excellent hFE linearity, and low noise (NF = 1 dB typ.). It is AEC-Q101 qualified and complementary to the 2SA1162.
Product Attributes
- Brand: Toshiba
- Type: Silicon NPN Epitaxial Bipolar Transistor
- Packaging: S-Mini
- Certifications: AEC-Q101 qualified
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
| Collector-base voltage | VCBO | 60 | V | ||||
| Collector-emitter voltage | VCEO | 50 | V | ||||
| Emitter-base voltage | VEBO | 5 | V | ||||
| Collector current (DC) | IC | 150 | mA | ||||
| Base current | IB | 30 | mA | ||||
| Collector power dissipation | PC | 200 | mW | (Note 2), (Note 4) | |||
| Junction temperature | Tj | 150 | °C | (Note 2), (Note 3) | |||
| Storage temperature | Tstg | -55 to 150 | °C | (Note 2), (Note 3) | |||
| Collector cut-off current | ICBO | µA | VCB = 60 V, IE = 0 mA | 0.1 | |||
| Emitter cut-off current | IEBO | µA | VEB = 5 V, IC = 0 mA | 0.1 | |||
| DC current gain | hFE | VCE = 6 V, IC = 2 mA | 70 | 700 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC = 100 mA, IB = 10 mA | 0.1 | 0.25 | ||
| Transition frequency | fT | MHz | VCE = 10 V, IC = 1 mA | 80 | |||
| Collector output capacitance | Cob | pF | VCB = 10 V, IE = 0 A, f = 1 MHz | 2.0 | 3.5 | ||
| Noise figure | NF | dB | VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kΩ | 1.0 | 10 |
2411220536_TOSHIBA-2SC2712-GR-TE85L-F_C22413283.pdf
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