Low Saturation Voltage NPN Silicon Transistor UTC 2SC2655G-Y-AE3-R for Power Amplifier Applications

Key Attributes
Model Number: 2SC2655G-Y-AE3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
DC Current Gain:
120@500mA,2V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
500mV
Type:
NPN
Pd - Power Dissipation:
350mW
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC2655G-Y-AE3-R
Package:
SOT-23
Product Description

Product Overview

The UNISONIC TECHNOLOGIES CO., LTD 2SC2655 is an NPN Silicon Transistor designed for power amplifier and power switching applications. It features low saturation voltage (VCE(SAT)= 0.5V Max.) and high-speed switching time (TSTG=1.0s Typ.).

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Material: Silicon
  • Certifications: Lead Free, Halogen Free

Technical Specifications

ParameterSymbolRatingUnitTest ConditionsMinTypMax
Absolute Maximum RatingsVCBO50V
VCEO50V
VEBO5V
IC2A
ICP (Note 1)3APW16ms, Duty Cycle50%
IB0.5A
PC (SOT-23)350mWTA= 25C
PC (SOT-89)500mWTA= 25C
PC (TO-92NL)900mWTA= 25C
TJ150C
TSTG-55 ~ +150C
Electrical CharacteristicsBVCBO50VIC= 10A, IE= 0
BVCEO50VIC= 10mA, IB= 0
BVEBO5VIE= 10A, IC= 0
ICBO1.0AVCB=50V, IE= 0
IEBO1.0AVEB= 5V, IC=0
hFE170240VCE=2V, IC=0.5A
hFE240VCE=2V, IC=1.5A
VCE(SAT)0.5VIC=1A, IB=0.05A
VBE(SAT)1.2VIC=1A, IB=0.05A
fT100MHzVCE=2V, IC=0.5A
COB30pFVCB= 10V, IE= 0, f=1MHz
tON0.1SIB1= -IB2=0.05A DUTY CYCLE1%

Ordering Information

Ordering NumberPackagePin AssignmentPacking
2SC2655Gx-AB3-RSOT-89B C ETape Reel
2SC2655Gx-AE3-RSOT-23E B CTape Reel
2SC2655L-x-T9N-B / 2SC2655Gx-T9N-BTO-92NLE C BTape Box
2SC2655L-x-T9N-K / 2SC2655Gx-T9N-KTO-92NLE C BBulk

Note: Pin Assignment: B: Base C: Collector E: Emitter

Note: L: Lead Free, G: Halogen Free


1808280123_UTC-2SC2655G-Y-AE3-R_C171548.pdf

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