Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TBC847B LM for Low Frequency Amplifier Applications
Product Overview
The TBC847 is a silicon NPN epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers reliable performance with clearly defined electrical characteristics and absolute maximum ratings.
Product Attributes
- Brand: Toshiba Corporation
- Material: Silicon NPN Epitaxial Type
- Start of Commercial Production: 2016-05
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Unless otherwise specified, Ta = 25 ℃) | |||||||
| Collector-base voltage | VCBO | 60 | V | ||||
| Collector-emitter voltage | VCEO | 50 | V | ||||
| Emitter-base voltage | VEBO | 6 | V | ||||
| Collector current (DC) | IC | 150 | mA | ||||
| Collector current (pulsed) | ICP | 200 | mA | ||||
| Base current | IB | 30 | mA | ||||
| Collector power dissipation | PC | 320 | mW | ||||
| Junction temperature | Tj | 150 | ℃ | ||||
| Storage temperature | Tstg | -55 to 150 | ℃ | (Note 1) | |||
| Electrical Characteristics (Unless otherwise specified, Ta = 25 ℃) | |||||||
| Collector cut-off current | ICBO | nA | VCB = 30 V, IE = 0 mA | 30 | |||
| Emitter cut-off current | IEBO | A | VEB = 6 V, IC = 0 mA | 0.1 | |||
| DC current gain | hFE | VCE = 5 V, IC = 10 A | 200 | 450 | |||
| DC current gain | hFE | VCE = 5 V, IC = 2 mA | 200 | 280 | 450 | ||
| Collector-emitter saturation voltage | VCE(sat) | V | IC = 10 mA, IB = 0.5 mA | 0.06 | 0.2 | ||
| Collector-emitter saturation voltage | VCE(sat) | V | IC = 100 mA, IB = 5 mA | 0.17 | 0.4 | ||
| Base-emitter saturation voltage | VBE(sat) | V | IC = 10 mA, IB = 0.5 mA | 0.7 | 0.77 | ||
| Base-emitter saturation voltage | VBE(sat) | V | IC = 100 mA, IB = 5 mA | 0.9 | |||
| Base-emitter voltage | VBE | V | IC = 2 mA, VCE = 5 V | 0.66 | |||
| Transition frequency | fT | MHz | IC = 10 mA, VCE = 5 V, f = 100 MHz | 100 | |||
| Collector output capacitance | Cob | pF | VCB = 10 V, IE = 0 mA, f = 1 MHz | 11 | |||
| Emitter input capacitance | Cib | pF | VEB = 0.5 V, IC = 0 mA, f = 1 MHz | 1.0 | 3.5 | ||
| Noise figure | NF | dB | VCE = 6 V, IC = 100 A, f = 1 kHz, RG = 10 k | 10 | |||
Note: hFE classification: B rank.
Note 1: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 0.42 mm2 3).
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2410010303_TOSHIBA-TBC847B-LM_C150169.pdf
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