Silicon NPN Epitaxial Transistor TOSHIBA RN1301 LF for Simplified Driver and Inverter Circuit Design

Key Attributes
Model Number: RN1301,LF
Product Custom Attributes
DC Current Gain:
30@10mA,5V
Emitter-Base Voltage VEBO:
10V
Current - Collector(Ic):
100mA
Type:
NPN
Transition Frequency(fT):
250MHz
Input Resistor:
4.7kΩ
Vce Saturation(VCE(sat)):
300mV@250uA,5mA
Resistor Ratio:
1.1
Number:
-
Pd - Power Dissipation:
100mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN1301,LF
Package:
SOT-323
Product Description

Product Overview

The RN1301~RN1306 series are Silicon NPN Epitaxial Transistors utilizing a PCT Process. These transistors are designed for switching, inverter circuit, interface circuit, and driver circuit applications. Key advantages include built-in bias resistors, which simplify circuit design and reduce the quantity of parts and manufacturing process. They are complementary to the RN2301 to RN2306 series.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon NPN Epitaxial Type (PCT Process)
  • Package: SC-70 (JEDEC, JEITA)
  • Weight: 6 mg (typ.)
  • Start of Commercial Production: 1987-09

Technical Specifications

Type No.R1 (k)R2 (k)VCBO (V)VCEO (V)VEBO (V)IC (mA)PC (mW)Tj (C)Tstg (C)ICBO (nA)ICEO (nA)IEBO (mA)hFEVCE(sat) (V)VI(ON) (V)VI(OFF) (V)fT (MHz)Cob (pF)
RN13014.74.750505100100150-55 to 1501005000.074-0.13830-800.1-0.31.1-2.01.0-1.52503-6
RN1302101050505100100150-55 to 1501005000.074-0.13830-800.1-0.31.2-2.41.0-1.52503-6
RN1303222250505100100150-55 to 1501005000.074-0.13830-800.1-0.31.3-3.01.0-1.52503-6
RN1304474750505100100150-55 to 1501005000.082-0.1530-800.1-0.31.5-5.00.5-0.82503-6
RN13052.24750505100100150-55 to 1501005000.078-0.14530-800.1-0.30.6-1.10.5-0.82503-6
RN13064.74750505100100150-55 to 1501005000.074-0.13830-800.1-0.30.7-1.30.5-0.82503-6

2410121733_TOSHIBA-RN1301-LF_C146301.pdf

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