TOSHIBA TBD62783AFWGZ EHZ 8 Channel DMOS Transistor Array for Industrial Switching Applications
Key Attributes
Model Number:
TBD62783AFWG(Z,EHZ)
Product Custom Attributes
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
TBD62783AFWG(Z,EHZ)
Package:
SOP-18
Product Description
TBD62783APG/FG/FNG/FWG 8-Channel Source Type DMOS Transistor Array
The TBD62783A series is an 8-circuit DMOS transistor array featuring built-in clamp diodes for switching inductive loads. This series is designed for high voltage and high current applications, offering reliable performance for various driving needs.
Product Attributes
- Brand: TOSHIBA
- Origin: Silicon Monolithic
- Material: DMOS Transistor Array
Technical Specifications
| Model | Package | Max Output Voltage (VOUT) | Max Output Current (IOUT) (per channel) | Input Voltage (Output ON) (MIN) | Input Voltage (Output OFF) (MAX) | Weight (Typ.) |
|---|---|---|---|---|---|---|
| TBD62783APG | P-DIP18-300-2.54-001 | 50 V | -500 mA | 2.0 V | 0.6 V | 1.3 g |
| TBD62783AFG | SOP18-P-375-1.27 | 50 V | -500 mA | 2.0 V | 0.6 V | 0.41 g |
| TBD62783AFNG | SSOP18-P-225-0.65 | 50 V | -500 mA | 2.0 V | 0.6 V | 0.09 g |
| TBD62783AFWG | P-SOP18-0812-1.27-001 | 50 V | -500 mA | 2.0 V | 0.6 V | 0.48 g |
Absolute Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Power supply voltage | VCC | -0.5 to 50 | V |
| Output current (for each channel) | IOUT | -500 | mA |
| Input voltage | VIN | -0.5 to 30 | V |
| Clamp diode reverse voltage | VR | 50 | V |
| Clamp diode forward current | IF | 500 | mA |
| Power dissipation (PG) | PD | 1.47 (Note1) | W |
| Power dissipation (FG) | PD | 0.96 (Note2) | W |
| Power dissipation (FNG) | PD | 0.96 (Note3) | W |
| Power dissipation (FWG) | PD | 1.31 (Note4) | W |
| Operating temperature | Topr | -40 to 85 | C |
| Storage temperature | Tstg | -55 to 150 | C |
Operating Ranges
| Characteristic | Symbol | Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Power supply voltage | VCC | IOUT = -100 mA | 2.0 | - | 50 | V |
| Input voltage (Output on) | VIN (ON) | IOUT = -100 mA or upper, VDS = 2.0 V | 2.0 | - | 25 | V |
| Input voltage (Output off) | VIN (OFF) | IOUT = -100 A or less, VDS = 2.0 V | 0 | - | 0.6 | V |
| Clamp diode forward current | IF | - | - | 400 | mA |
Electrical Characteristics
| Characteristics | Symbol | Test Circuit | Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|---|
| Output leakage current | Ileak | 1 | VCC = 50 V, VIN = 0 V | - | - | 1.0 | A |
| Output voltage (Output ON-resistance) | VDS (RON) | 2 | IOUT = -350 mA, VIN = 5.0 V, VCC = 5.0 V | - | 0.56 (1.6) | 1.14 (3.25) | V () |
| Input current (Output on) | IIN (ON) | 3 | VIN = 2.0 V | - | - | 0.1 | mA |
| Input current (Output off) | IIN (OFF) | 4 | VIN = 0 V, Ta = 85C | - | - | 1.0 | A |
| Input voltage (Output on) | VIN (ON) | 5 | IOUT = -100 mA or upper, VDS = 2.0 V | - | - | 2.0 | V |
| Supply current (for each channel) | ICC | 3 | VIN = 2.0 V, VCC = 50 V, Output open | - | - | 1.5 | mA |
| Clamp diode reverse current | IR | 6 | VR = 50 V, Ta = 85C | - | - | 1.0 | A |
| Clamp diode forward voltage | VF | 7 | IF = 350 mA | - | - | 2.0 | V |
| Turnon delay | tON | 8 | VCC = 50 V, RL = 125 , CL = 15 pF | - | 0.4 | - | s |
| Turnoff delay | tOFF | 8 | VCC = 50 V, RL = 125 , CL = 15 pF | - | 2.0 | - | s |
2409272301_TOSHIBA-TBD62783AFWG-Z-EHZ_C5349737.pdf
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