Silicon NPN Epitaxial Transistor TOSHIBA 2SC2712-GR LXHF for Audio Frequency Amplifier Applications

Key Attributes
Model Number: 2SC2712-GR,LXHF
Product Custom Attributes
Current - Collector Cutoff:
100nA
DC Current Gain:
200@2mA,6V
Transition Frequency(fT):
80MHz
Type:
NPN
Vce Saturation(VCE(sat)):
250mV
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC2712-GR,LXHF
Package:
TO-236-3(SOT-23-3)
Product Description

2SC2712 Bipolar Transistor

The 2SC2712 is a silicon NPN epitaxial transistor designed for low-frequency and general-purpose audio frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. The transistor is AEC-Q101 qualified and complementary to the 2SA1162.

Product Attributes

  • Brand: Toshiba
  • Type: Silicon NPN Epitaxial Transistor
  • Certifications: AEC-Q101 qualified
  • Packaging: S-Mini

Technical Specifications

CharacteristicSymbolRatingUnitTest ConditionMinTyp.Max
Collector-base voltageVCBO60V
Collector-emitter voltageVCEO50V
Emitter-base voltageVEBO5V
Collector current (DC)IC150mA
Base currentIB30mA
Collector power dissipationPC200mWTa = 25 ℃ (Note 2), (Note 4)
Junction temperatureTj150-55 to 150
Storage temperatureTstg125(Note 2), (Note 3)-55 to 125
Collector cut-off currentICBOμAVCB = 60 V, IE = 0 mA0.1
Emitter cut-off currentIEBOμAVEB = 5 V, IC = 0 mA0.1
DC current gainhFEVCE = 6 V, IC = 2 mA70700
Collector-emitter saturation voltageVCE(sat)VIC = 100 mA, IB = 10 mA0.10.25
Transition frequencyfTMHzVCE = 10 V, IC = 1 mA80
Collector output capacitanceCobpFVCB = 10 V, IE = 0 A, f = 1 MHz2.03.5
Noise figureNFdBVCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k℃1.010

2411220536_TOSHIBA-2SC2712-GR-LXHF_C6054196.pdf

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