Silicon PNP Transistor UTC 2SB649AG C TN3 R Suitable for Complementary Pair Amplifier Applications
Key Attributes
Model Number:
2SB649AG-C-TN3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
DC Current Gain:
100@150mA,5V
Transition Frequency(fT):
140MHz
Vce Saturation(VCE(sat)):
1V
Type:
PNP
Pd - Power Dissipation:
2W
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
2SB649AG-C-TN3-R
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SB649/A is a PNP Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SD669/A for low-frequency power amplifiers.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | 2SB649 | 2SB649A | Unit | Conditions |
| Collector-Base Voltage | VCBO | -180 | V | ||
| Collector-Emitter Voltage | VCEO | -120 | -160 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current | IC | -1.5 | A | ||
| Collector Peak Current | IC(PEAK) | -3 | A | ||
| Power Dissipation (SOT-89) | PD | 0.5 | W | ||
| Power Dissipation (SOT-223) | PD | 1 | W | ||
| Power Dissipation (TO-92/TO-92NL) | PD | 0.6 | W | ||
| Power Dissipation (TO-126) | PD | 1 | W | ||
| Power Dissipation (TO-126C/TO-126S) | PD | 1.3 | W | ||
| Power Dissipation (TO-252) | PD | 2 | W | ||
| Junction Temperature | TJ | +150 | C | ||
| Storage Temperature | TSTG | -40 ~ +150 | C | ||
| Junction to Case (SOT-89) | JC | 38 | C/W | ||
| Junction to Case (SOT-223) | JC | 15 | C/W | ||
| Junction to Case (TO-92/TO-92NL) | JC | 80 | C/W | ||
| Junction to Case (TO-126) | JC | 6.25 | C/W | ||
| Junction to Case (TO-126C/TO-126S) | JC | 10 | C/W | ||
| Junction to Case (TO-252) | JC | 4.5 | C/W | ||
| Collector to Base Breakdown Voltage | BVCBO | -180 | V | IC=-1mA, IE=0 | |
| Collector to Emitter Breakdown Voltage | BVCEO | -120 | -160 | V | IC=-10mA, RBE= |
| Emitter to Base Breakdown Voltage | BVEBO | -5 | V | IE=-1mA, IC=0 | |
| Collector Cut-off Current | ICBO | -10 | A | VCB=-160V, IE=0 | |
| DC Current Gain (hFE1) | hFE1 | 60-320 | 60-200 | VCE=-5V, IC=-150mA (note) | |
| DC Current Gain (hFE2) | hFE2 | 30 | 30 | VCE=-5V, IC=-500mA (note) | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | -1 | V | IC=-600mA, IB=-50mA | |
| Base-Emitter Voltage | VBE | -1.5 | V | VCE=-5V, IC=-150mA | |
| Current Gain Bandwidth Product | fT | 140 | MHz | VCE=-5V, IC=-150mA | |
| Output Capacitance | Cob | 27 | pF | VCB=-10V, IE=0, f=1MHz |
1810301624_UTC-2SB649AG-C-TN3-R_C87885.pdf
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