Audio Frequency Amplifier and Switching Transistor TOSHIBA 2SA1182-Y LF Silicon PNP Epitaxial Device
Key Attributes
Model Number:
2SA1182-Y,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
120@100mA,1V
Transition Frequency(fT):
200MHz
Type:
PNP
Vce Saturation(VCE(sat)):
250mV
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
2SA1182-Y,LF
Package:
TO-236-3(SOT-23-3)
Product Description
Product Overview
The TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. This device is AEC-Q101 Qualified and features excellent hFE linearity, with a minimum hFE (2) of 25 at VCE = -6 V and IC = -400 mA. It is complementary to the 2SC2859.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon PNP Epitaxial Transistor
- Certifications: AEC-Q101 Qualified (Note1)
- Package: JEDEC TO-236MOD / JEITA SC-59 (TOSHIBA 2-3F1A)
- Weight: 0.012 g (typ.)
- Start of Commercial Production: 1982-12
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -35 V, IE = 0 A | - | - | -0.1 | µA |
| Emitter cut-off current | IEBO | VEB = -5 V, IC = 0 A | - | - | -0.1 | µA |
| DC current gain | hFE (1) | VCE = -1 V, IC = -100 mA | 70 | - | 400 | - |
| hFE (2) | VCE = -6 V, IC = -400 mA | 25 | - | - | - | |
| Collector-emitter saturation voltage | VCE (sat) | IC = -100 mA, IB = -10 mA | - | -0.1 | -0.25 | V |
| Base-emitter voltage | VBE | VCE = -1 V, IC = -100 mA | - | -0.8 | -1.0 | V |
| Transition frequency | fT | VCE = -6 V, IC = -20 mA | - | 200 | - | MHz |
| Collector output capacitance | Cob | VCB = -6 V, IE = 0 A, f = 1 MHz | - | 13 | - | pF |
2411220627_TOSHIBA-2SA1182-Y-LF_C6667875.pdf
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