Power Amplifier Voltage Amplifier Silicon NPN Transistor UTC 2SC2881G-Y-AB3-R with 120V VCEO and 120MHz fT
Key Attributes
Model Number:
2SC2881G-Y-AB3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
240@100mA,5V
Transition Frequency(fT):
120MHz
Vce Saturation(VCE(sat)):
1V@500mA,50mA
Pd - Power Dissipation:
600mW
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
120V
Mfr. Part #:
2SC2881G-Y-AB3-R
Package:
SOT-89
Product Description
Product Overview
The 2SC2881 is an NPN Silicon Transistor from Unisonic Technologies Co., Ltd, designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO=120V) and a high transition frequency (fT=120MHz typ.). It is complementary to the 2SA1201 transistor.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Type: NPN Transistor
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Ordering Number | Package | Pin Assignment | VCEO (V) | fT (MHz) | IC (mA) | PC (mW) | hFE Range |
|---|---|---|---|---|---|---|---|
| 2SC2881G-x-AB3-R | SOT-89 | B C E | 120 | 120 (typ.) | 800 | 500 | 80 - 240 |
| 2SC2881G-x-T92-B | TO-92 | B C E | 120 | 120 (typ.) | 800 | 600 | 80 - 240 |
| 2SC2881G-x-T92-K | TO-92 | B C E | 120 | 120 (typ.) | 800 | 600 | 80 - 240 |
| 2SC2881L-x-T92-B | TO-92 | B C E | 120 | 120 (typ.) | 800 | 600 | 80 - 240 |
| 2SC2881L-x-T92-K | TO-92 | B C E | 120 | 120 (typ.) | 800 | 600 | 80 - 240 |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector-base voltage | VCBO | 120 | V |
| Collector-emitter voltage | VCEO | 120 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 800 | mA |
| Base current | IB | 160 | mA |
| Collector power dissipation (SOT-89) | PC | 500 | mW |
| Collector power dissipation (TO-92) | PC | 600 | mW |
| Junction temperature | TJ | 150 | C |
| Storage temperature range | TSTG | -55 ~ 150 | C |
Electrical Characteristics
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA, IB=0 | 120 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=1mA, Ic=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=120V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=5V, IC=100mA | 80 | 240 | ||
| Collector-emitter saturation voltage | VCE(SAT) | IC=500mA, IB=50mA | 1.0 | V | ||
| Base-emitter voltage | VBE | VCE=5V, IC=500mA | 1.0 | V | ||
| Transition frequency | fT | VCE=5V, IC=100mA | 120 | MHz | ||
| Collector output capacitance | COB | VCB=10V, f=1MHz, IE=0 | 30 | pF |
2411121117_UTC-2SC2881G-Y-AB3-R_C5310373.pdf
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