TOSHIBA 2SA1586-Y LF Bipolar Transistor for High Collector Current and Audio Frequency Amplification
Key Attributes
Model Number:
2SA1586-Y,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
70@2mA,6V
Transition Frequency(fT):
80MHz
Type:
PNP
Vce Saturation(VCE(sat)):
100mV
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SA1586-Y,LF
Package:
SOT-323(SC-70-3)
Product Description
Product Overview
The 2SA1586 is a silicon PNP epitaxial bipolar transistor designed for low-frequency and general-purpose audio frequency amplifier applications. It offers high voltage, high collector current, and excellent hFE linearity, making it a versatile component for various electronic designs. This transistor is AEC-Q101 qualified and is complementary to the 2SC4116.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
- Package: USM
Technical Specifications
| Orderable Part Number | hFE Classification | AEC-Q101 | Note |
| 2SA1586-O | O (70 to 140) | YES | General Use |
| 2SA1586-Y | Y (120 to 240) | YES | General Use |
| 2SA1586-GR | GR (200 to 400) | YES | General Use |
| 2SA1586-O,LF | O (70 to 140) | YES | Unintended Use |
| 2SA1586-O,LXGF | O (70 to 140) | YES | Automotive Use |
| 2SA1586-O,LXHF | O (70 to 140) | YES | Automotive Use |
| 2SA1586-Y,LF | Y (120 to 240) | YES | Unintended Use |
| 2SA1586-Y,LXGF | Y (120 to 240) | YES | Automotive Use |
| 2SA1586-Y,LXHF | Y (120 to 240) | YES | Automotive Use |
| 2SA1586-GR,LF | GR (200 to 400) | YES | Unintended Use |
| 2SA1586-GR,LXGF | GR (200 to 400) | YES | Automotive Use |
| 2SA1586-GR,LXHF | GR (200 to 400) | YES | Automotive Use |
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Collector-base voltage | VCBO | -50 | V | (Note 2), (Note 4) |
| Collector-emitter voltage | VCEO | -50 | V | (Note 3) |
| Emitter-base voltage | VEBO | -5 | V | (Note 2) |
| Collector current (DC) | IC | -150 | mA | (Note 3) |
| Base current | IB | -30 | mA | (Note 2) |
| Collector power dissipation | PC | 200 | mW | (Note 3) |
| Junction temperature | Tj | 100 | C | (Note 2) |
| Storage temperature | Tstg | -55 to 150 | C | (Note 2) |
| Characteristics | Symbol | Min | Typ. | Max | Unit | Test Condition |
| Collector cut-off current | ICBO | -0.1 | A | VCB = -50 V, IE = 0 A | ||
| Emitter cut-off current | IEBO | -0.1 | A | VEB = -5 V, IC = 0 A | ||
| DC current gain | hFE | 70 | 400 | VCE = -6 V, IC = -2 mA | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.1 | -0.3 | V | IC = -100 mA, IB = -10 mA | |
| Transition frequency | fT | 80 | MHz | VCE = -10 V, IC = -1 mA | ||
| Collector output capacitance | Cob | 4 | pF | VCB = -10 V, IE = 0 A, f = 1 MHz | ||
| Noise figure | NF | 1.0 | 10 | dB | VCE = -6 V, IC = -0.1 mA, f = 1 kHz, RG = 10 k |
2410010403_TOSHIBA-2SA1586-Y-LF_C2929211.pdf
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