silicon NPN transistor TOSHIBA 2SC5810 TE12L F ideal for DC DC converter and fast switching circuits
Key Attributes
Model Number:
2SC5810(TE12L,F)
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
7V
DC Current Gain:
1000@0.1A,2V
Vce Saturation(VCE(sat)):
170mV@300mA,6mA
Type:
NPN
Pd - Power Dissipation:
2W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC5810(TE12L,F)
Package:
SC-62
Product Description
Product Overview
The TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications. It is suitable for DC-DC converters and strobe applications, offering high DC current gain (hFE = 400 to 1000), low collector-emitter saturation voltage (VCE (sat) = 0.17 V max), and fast switching speeds (tf = 85 ns typ.).
Product Attributes
- Brand: TOSHIBA
- Type: Silicon NPN Epitaxial Transistor
- Origin: Japan (implied by TOSHIBA)
- Certifications: RoHS COMPATIBLE / [[G]]/RoHS
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = 100 V, IE = 0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB = 7 V, IC = 0 | 100 | nA | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 50 | V | ||
| DC current gain | hFE (1) | VCE = 2 V, IC = 0.1 A | 400 | 1000 | ||
| hFE (2) | VCE = 2 V, IC = 0.3 A | 200 | ||||
| Collector-emitter saturation voltage | VCE (sat) | IC = 300 mA, IB = 6 mA | 0.17 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC = 300 mA, IB = 6 mA | 1.10 | V | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 5 | pF | ||
| Switching time | Rise time | See Figure 1. | 35 | ns | ||
| Storage time | See Figure 1. | 680 | ns | |||
| Fall time | See Figure 1. | 85 | ns |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 100 | V |
| Collector-emitter voltage | VCEX | 80 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 7 | V |
| Collector current (DC) | IC | 1.0 | A |
| Collector current (Pulse) | ICP | 2.0 | A |
| Base current (DC) | IB | 0.1 | A |
| Collector power dissipation (t = 10 s) | PC (Note 1) | 1.0 | W |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | -55 to 150 | C |
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
2504101957_TOSHIBA-2SC5810-TE12L-F_C5340732.pdf
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