Audio Frequency Amplifier Transistor TOSHIBA 2SA1162-GR LF Silicon PNP with Low Noise Figure 1dB Typ
Key Attributes
Model Number:
2SA1162-GR,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
70@2mA,6V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
300mV@100mA,10mA
Type:
PNP
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+125℃
Mfr. Part #:
2SA1162-GR,LF
Package:
TO-236-3(SOT-23-3)
Product Description
Product Overview
The 2SA1162 is a silicon PNP epitaxial transistor from TOSHIBA, utilizing the PCT process. It is designed for general-purpose amplifier applications in audio frequencies. Key advantages include high voltage and current capabilities (VCEO = -50 V, IC = -150 mA max), excellent hFE linearity, high hFE (70 to 400), low noise (NF = 1dB typ.), and a complementary pairing with the 2SC2712. It comes in a small package.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon PNP Epitaxial Transistor
- Process: PCT process
- Applications: Audio Frequency General Purpose Amplifier
- Complementary to: 2SC2712
- Package: JEDEC TO-236MOD (JEITA SC-59)
- Weight: 0.012 g (typ.)
- Start of commercial production: 1982-12
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -50 V, IE = 0 | - | - | -0.1 | µA |
| Emitter cut-off current | IEBO | VEB = -5 V, IC = 0 | - | - | -0.1 | µA |
| DC current gain | hFE | VCE = -6 V, IC = -2 mA | 70 | - | 400 | - |
| Collector-emitter saturation voltage | VCE (sat) | IC = -100 mA, IB = -10 mA | - | -0.1 | -0.3 | V |
| Transition frequency | fT | VCE = -10 V, IC = -1 mA | 80 | - | - | MHz |
| Collector output capacitance | Cob | VCB = -10 V, IE = 0, f = 1 MHz | - | 4 | 7 | pF |
| Noise figure | NF | VCE = -6 V, IC = -0.1 mA, f = 1 kHz, Rg = 10 kΩ | - | 1.0 | 10 | dB |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -50 | V |
| Collector-emitter voltage | VCEO | -50 | V |
| Emitter-base voltage | VEBO | -5 | V |
| Collector current | IC | -150 | mA |
| Base current | IB | -30 | mA |
| Collector power dissipation | PC | 150 | mW |
| Junction temperature | Tj | 125 | °C |
| Storage temperature range | Tstg | -55 to 125 | °C |
2410121836_TOSHIBA-2SA1162-GR-LF_C155455.pdf
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