Power Electronics N Channel MOSFET Slkor SL90N20P with Fast Switching and Avalanche Tested Reliability
Key Attributes
Model Number:
SL90N20P
Product Custom Attributes
Drain To Source Voltage:
220V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V,95A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
561pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
140W
Input Capacitance(Ciss):
5.784nF
Gate Charge(Qg):
-
Mfr. Part #:
SL90N20P
Package:
TO-247
Product Description
Product Overview
This N-Channel MOSFET offers fast switching, 100% avalanche tested performance, and improved dv/dt capability. It is designed for high-power applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.
Product Attributes
- Brand: SLKORMicro
- Model: SL90N20P
- Package Type: TO-247
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS= 0V, ID = 250A | 220 | V |
| Continuous Drain Current | ID | VGS = 10V, TC = 25C (note1) | 80 | A |
| Pulsed Drain Current | IDM | 320 | A | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Single Pulse Avalanche Energy | EAS | L = 10mH, VDD = 50V, RG = 25 , Starting TJ = 25 C (note2) | 1960.2 | mJ |
| Avalanche Current | IAS | (note1) | 19.8 | A |
| Repetitive Avalanche Energy | EAR | (note1) | 1176.1 | mJ |
| Power Dissipation | PD | TC = 25C | 140 | W |
| Peak Diode Recovery dv/dt | dv/dt | (note1) | 5.0 | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | 0.89 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 60 | C/W | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 40V, VGS= 0V, TJ = 25C | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 32V, VGS= 0V, TJ = 125C | 100 | A |
| Gate-Source Leakage | IGSS | VGS= 20V | 100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS , ID = 250A | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS= 10V, ID = 95A(Note3,4) | 35 | m |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | 57-84 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | 8-93 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | 5-61 | pF |
| Total Gate Charge | Qg | VDD = 20V, ID = 190A, VGS = 10V (Note4) | 67 | nC |
| Gate-Source Charge | Qgs | VDD = 20V, ID = 190A, VGS = 10V (Note4) | 33.8 | nC |
| Gate-Drain Charge | Qgd | VDD = 20V, ID = 190A, VGS = 10V (Note4) | 17.7 | nC |
| Turn-on Delay Time | td(on) | VDD = 20V, ID =190A, RG = 10 , VGS = 10V (Note4) | 5 | ns |
| Turn-on Rise Time | tr | VDD = 20V, ID =190A, RG = 10 , VGS = 10V (Note4) | 65 | ns |
| Turn-off Delay Time | td(off) | VDD = 20V, ID =190A, RG = 10 , VGS = 10V (Note4) | 150 | ns |
| Turn-off Fall Time | tf | VDD = 20V, ID =190A, RG = 10 , VGS = 10V (Note4) | 167 | ns |
| Continuous Body Diode Current | IS | TC = 25 C | 80 | A |
| Pulsed Body Diode Forward Current | ISM | 320 | A | |
| Body Diode Voltage | VSD | TJ = 25C, ISD = 95A, VGS = 0V | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 190A, diF/dt =100A /s | 60 | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V,IS = 190A, diF/dt =100A /s | 5.61 | C |
2410121447_Slkor-SL90N20P_C5375306.pdf
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