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quality High Current Switching NPN Transistor UTC 2SD1804L-T-TN3-R with Fast Switching and Excellent Linearity factory
quality High Current Switching NPN Transistor UTC 2SD1804L-T-TN3-R with Fast Switching and Excellent Linearity factory

High Current Switching NPN Transistor UTC 2SD1804L-T-TN3-R with Fast Switching and Excellent Linearity

Key Attributes
Model Number: 2SD1804L-T-TN3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
DC Current Gain:
200@500mA,2V
Transition Frequency(fT):
180MHz
Vce Saturation(VCE(sat)):
200mV
Type:
NPN
Pd - Power Dissipation:
20W
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SD1804L-T-TN3-R
Package:
TO-252
Product Description

Product Overview

The UNISONIC TECHNOLOGIES CO., LTD 2SD1804 is an NPN Silicon Transistor designed for high current switching applications. It offers a low collector-to-emitter saturation voltage, high current capability, high transition frequency (fT), excellent linearity of hFE, and fast switching times. Its small and slim package facilitates the miniaturization of electronic devices.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Material: Silicon
  • Certifications: Lead Free, Halogen Free

Technical Specifications

Parameter Symbol Rating/Condition Unit
Absolute Maximum Ratings
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 8 A
Collector Current (PULSE) IC(PULSE) 12 A
Collector Dissipation (TO-220, TC=25C) PD 65 W
Collector Dissipation (TO-251/TO-252, TA=25C) PD 2 W
Junction Temperature TJ +150 C
Storage Temperature TSTG -55~+150 C
Electrical Characteristics (TA=25C, unless otherwise specified)
Collector-Base Breakdown Voltage BVCBO IC=10A, IE=0 60 V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, RBE= 50 V
Emitter-Base Breakdown Voltage BVEBO IE=10A, IC=0 6 V
Collector Cutoff Current ICBO VCB=40V, IE=0 1 A
Emitter Cutoff Current IEBO VEB=4V, IC=0 1 A
DC Current Gain (hFE1) hFE1 VCE=2V, IC=0.5A 70 ~ 400
DC Current Gain (hFE2) hFE2 VCE=2V, IC=6A 35 (MIN)
Gain-Bandwidth Product fT VCE=5V, IC=1A 180 MHz
Output Capacitance Cob VCE=10V, f=1MHz 65 pF
Collector-Emitter Saturation Voltage VCE(SAT) IC=4A, IB=0.2A 200 ~ 400 mV
Base-Emitter Saturation Voltage VBE(SAT) IC=4A, IB=0.2A 0.95 ~ 1.3 V
Storage Time tSTG See test circuit 500 ns
Fall Time tF See test circuit 20 ns

Ordering Information

Ordering Number Package Pin Assignment Packing
2SD1804L-x-TA3-T
2SD1804G-x-TA3-T		 TO-220 B C E Tube
2SD1804L-x-TM3-T
2SD1804G-x-TM3-T		 TO-251 B C E Tube
2SD1804L-x-TN3-R
2SD1804G-x-TN3-R		 TO-252 B C E Tape Reel

Note: Pin Assignment: B: Base, C: Collector, E: Emitter


1809192224_UTC-2SD1804L-T-TN3-R_C85224.pdf

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