power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Key Attributes
Model Number:
XCH6003
Product Custom Attributes
Mfr. Part #:
XCH6003
Package:
SOT-23-3L
Product Description
Product Overview
The XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and excellent Cdv/dt effect decline, contributing to its fast switching capabilities. It meets RoHS and Green Product requirements.
Product Attributes
- Brand: XCH
- Certifications: RoHS, Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25°C | 3.5 | A | ||
| TA=100°C | 1.9 | A | ||||
| Pulsed Drain Current | IDM | 18 | A | |||
| Total Power Dissipation | PD | TA=25°C | 1.2 | W | ||
| TA=100°C | 0.45 | W | ||||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | °C | ||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient (Steady-State) | RθJA | 85 | 105 | °C/W | ||
| Electrical Characteristics | ||||||
| Static Parameter | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250μA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | μA |
| VDS=60V, VGS=0V, Tj=150°C | - | - | 100 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 0.9 | 1.35 | 2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=3A | - | 62 | 85 | mΩ |
| VGS=4.5V, ID=3A | - | 70 | 95 | mΩ | ||
| Diode Forward Voltage | VSD | IS=3A, VGS=0V | - | 0.85 | 1.2 | V |
| Gate resistance | RG | f=1MHz, Open drain | - | 2 | - | Ω |
| Maximum Body-Diode Continuous Current | IS | - | - | 3 | A | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | - | 500 | - | pF |
| Output Capacitance | Coss | - | 28 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 22 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=3A | - | 10 | - | nC |
| Gate-Source Charge | Qgs | - | 1.7 | - | nC | |
| Gate-Drain Charge | Qgd | - | 2.1 | - | nC | |
| Reverse Recovery Charge | Qrr | IF=3A, di/dt=100A/us | - | 7 | - | nC |
| Reverse Recovery Time | trr | - | 33 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=30V, RL=20Ω, RGEN=3Ω | - | 3.6 | - | ns |
| Turn-on Rise Time | tr | - | 17.6 | - | ns | |
| Turn-off Delay Time | tD(off) | - | 13 | - | ns | |
| Turn-off fall Time | tf | - | 23 | - | ns | |
2512121540_XCH-XCH6003_C53155321.pdf
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