High current gain NPN silicon transistor UTC PZTA42G designed for in telephone switch and high voltage switch systems
Key Attributes
Model Number:
PZTA42G
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
300@10mA,10V
Transition Frequency(fT):
50MHz
Vce Saturation(VCE(sat)):
200mV@20mA,2mA
Pd - Power Dissipation:
1W
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Mfr. Part #:
PZTA42G
Package:
SOT-223
Product Description
Product Overview
The UTC PZTA42/43 are high voltage NPN silicon transistors designed for telephone switch and high voltage switch applications. They offer high current gain and are complementary to the UTC PZTA92/93 series.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free (indicated by 'G' in ordering number)
Technical Specifications
| Parameter | Symbol | PZTA42 Rating | PZTA43 Rating | Unit | Conditions |
| Collector-Base Voltage | VCBO | 300 | 200 | V | |
| Collector-Emitter Voltage | VCEO | 300 | 200 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | ||
| Collector Current | IC | 500 | mA | ||
| Collector Power Dissipation | PC | 1 | W | TA=25C | |
| Junction Temperature | TJ | 150 | C | ||
| Storage Temperature | TSTG | -55 ~ +150 | C | ||
| Collector-Base Breakdown Voltage | BVCBO | 300 | 200 | V | IC =100A, IE=0 |
| Collector-Emitter Breakdown Voltage | BVCEO | 300 | 200 | V | IC =1mA, IB=0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE=100A, IC =0 | |
| Collector Cut-Off Current | ICBO | 100 | nA | VCB=200V, IE=0 (PZTA42); VCB=160V, IE=0 (PZTA43) | |
| Emitter Cut-Off Current | IEBO | 100 | nA | VBE=6V, IC =0 (PZTA42); VBE=4V, IC =0 (PZTA43) | |
| DC Current Gain | hFE | 80 | VCE=10V, IC =1mA | ||
| DC Current Gain | hFE | 80-300 | VCE=10V, IC =10mA | ||
| DC Current Gain | hFE | 80 | VCE=10V, IC =30mA | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.2 | V | IC =20mA, IB=2mA | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.90 | V | IC =20mA, IB=2mA | |
| Current Gain Bandwidth Product | fT | 50 | MHz | VCE=20V, IC =10mA, f=100MHz | |
| Collector Base Capacitance | CCB | 3 | 4 | pF | VCB=20V, IE=0, f=1MHz |
2308251125_UTC-PZTA42G_C7509621.pdf
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