npn transistor YONGYUTAI S8050 with plastic encapsulation and 625 milliwatt collector power dissipation
Key Attributes
Model Number:
S8050
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
400@50mA,1V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
600mV@500mA,50mA
Pd - Power Dissipation:
625mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8050
Package:
TO-92
Product Description
Product Overview
This document details the S8050 NPN transistor, a plastic-encapsulated component designed for general-purpose applications. It offers complementary characteristics to the S8550 transistor and features a collector current of up to 0.5A.
Product Attributes
- Brand: S8050
- Type: NPN Transistor
- Encapsulation: TO-92 Plastic
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCBO | Collector Base Voltage | 40 | V | |||
| VCEO | Collector Emitter Voltage | 25 | V | |||
| VEBO | Emitter Base Voltage | 5 | V | |||
| IC | Collector Current | 500 | mA | |||
| PC | Collector Power Dissipation | (Ta=25C) | 625 | mW | ||
| Tj | Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature | -55 | ~ | +150 | C | |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100A, IE = 0 | 40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 0.1mA, IB = 0 | 25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 100A, IC = 0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB = 40V, IE = 0 | 100 | nA | ||
| ICEO | Collector cut-off current | VCE = 20V, IE = 0 | 100 | nA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC = 0 | 100 | nA | ||
| hFE(1) | DC current gain | VCE = 1V, IC = 50mA | 200 | 400 | ||
| hFE(2) | DC current gain | VCE = 5V, IC = 100mA | 85 | |||
| hFE(3) | DC current gain | VCE = 1V, IC = 500mA | 50 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 500mA, IB = 50mA | 0.6 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC = 500mA, IB = 50mA | 1.2 | V | ||
| fT | Transition frequency | VCE=6V, IC=20mA, f=30MHz | 150 | MHz |
2508081534_YONGYUTAI-S8050_C50206588.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
