Plastic encapsulated PNP transistor YONGYUTAI S8550 ideal for in diverse electronic circuit projects
Key Attributes
Model Number:
S8550
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
300@1mA,5V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
600mV@500mA,50mA
Pd - Power Dissipation:
625mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8550
Package:
TO-92
Product Description
Product Overview
The S8550 is a PNP transistor in a TO-92 plastic-encapsulated package, designed for general-purpose applications. It features excellent hFE linearity.
Product Attributes
- Material: Plastic-Encapsulate
- Type: PNP Transistors
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCBO | Collector Base Voltage | -40 | V | |||
| VCEO | Collector Emitter Voltage | -25 | V | |||
| VEBO | Emitter Base Voltage | -5 | V | |||
| IC | Collector Current | -500 | mA | |||
| PC | Collector Power Dissipation | (Ta=25C unless otherwise noted) | 625 | mW | ||
| Tj | Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature | -55 | +150 | C | ||
| V(BR)CBO | Collector-base breakdown voltage | IC=-100A,IE=0 | -40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA,IB=0 | -25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-100A,IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-40V,IE=0 | -100 | nA | ||
| ICEO | Collector cut-off current | VCE=-20V,IB=0 | -100 | nA | ||
| IEBO | Emitter cut-off current | VEB=-3V,IC=0 | -100 | nA | ||
| hFE(1) | DC current gain | VCE=-5V, IC=-1mA | 200 | 300 | ||
| hFE(2) | DC current gain | VCE=-5V, IC=-10mA | 150 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=-500mA,IB=-50mA | -0.6 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=-500mA,IB=-50mA | -1.2 | V | ||
| fT | Transition frequency | VCE=-6V,IC=-20mA,f=30MHz | 150 | MHz |
2508081534_YONGYUTAI-S8550_C50207089.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
