Switching regulator transistor UTC 2SC5353BL-TN3-R high voltage NPN silicon for DC DC converter design

Key Attributes
Model Number: 2SC5353BL-TN3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100uA
Transition Frequency(fT):
-
Number:
1 NPN
Vce Saturation(VCE(sat)):
1V
Type:
NPN
Pd - Power Dissipation:
22W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
750V
Operating Temperature:
-
Mfr. Part #:
2SC5353BL-TN3-R
Package:
TO-252
Product Description

Product Overview

The 2SC5353B is a high-voltage NPN silicon transistor designed for switching regulator and high-voltage switching applications, as well as high-speed DC-DC converters. It features excellent switching times with tR = 0.7s(MAX) and tF = 0.5s (MAX), and a high collector breakdown voltage of VCEO = 750V.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Material: Silicon
  • Certifications: Lead Free, Halogen Free

Technical Specifications

Ordering Number Package Pin Assignment Packing
2SC5353BL-T60-K TO-126 B C E Bulk
2SC5353BG-T60-K TO-126 B C E Bulk
2SC5353BL-T6C-K TO-126C B C E Bulk
2SC5353BG-T6C-K TO-126C B C E Bulk
2SC5353BL-TA3-T TO-220 B C E Tube
2SC5353BG-TA3-T TO-220 B C E Tube
2SC5353BL-TF3-T TO-220F B C E Tube
2SC5353BG-TF3-T TO-220F B C E Tube
2SC5353BL-TF1-T TO-220F1 B C E Tube
2SC5353BG-TF1-T TO-220F1 B C E Tube
2SC5353BL-TM3-T TO-251 B C E Tube
2SC5353BG-TM3-T TO-251 B C E Tube
2SC5353BL-TN3-R TO-252 B C E Tape Reel
2SC5353BG-TN3-R TO-252 B C E Tape Reel
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 900 V
Collector-Emitter Voltage VCEO 750 V
Emitter-Base Voltage VEBO 7 V
Collector Current IC 3 A
Pulse Collector Current ICP 5 A
Base Current IB 1 A
Power Dissipation (TO-126/TO-126C) PD 20 W
Power Dissipation (TO-220) PD 25 W
Power Dissipation (TO-251/TO-252) PD 22 W
Junction Temperature TJ +150 C
Storage Temperature TSTG -40 ~ +150 C
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO IC=1 mA, IE = 0 900 V
Collector-Emitter Breakdown Voltage BVCEO IC=10 mA, IB = 0 750 V
Collector Cut-off Current ICBO VCB=720V, IE= 0 100 A
Emitter Cut-off Current IEBO VEB=7V, IC= 0 10 A
DC Current Gain hFE1 VCE=5 V, IC=1 mA 10
DC Current Gain hFE2 VCE=5 V, IC=0.15 A 15
Collector-Emitter Saturation Voltage VCE(SAT) IC=1.2 A, IB=0.24 A 1.0 V
Base-Emitter Saturation Voltage VBE(SAT) IC=1.2 A, IB=0.24 A 1.3 V
Rise Time tR 0.7 S
Storage Time tSTG 4.0 S
Fall Time tF IB1 IB2 300 0.5 S

2304140030_UTC-2SC5353BL-TN3-R_C73311.pdf

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