Single Bipolar Transistors
TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage and High Current Gain
Product OverviewThe TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage capabilities (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), and low noise (NF = 1dB ...
Power application NPN transistor UTC MMBT5551G B AE3 R featuring high current gain and voltage rating
Product OverviewThe UTC MMBT5551 is a high voltage, fast-switching NPN silicon transistor designed for power applications. It offers high breakdown voltage, high current gain, and high switching speed, making it suitable for various switching applications.Product AttributesBrand: UNISONIC TECHNOLOGI...
Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TBC847B LM for Low Frequency Amplifier Applications
Product Overview The TBC847 is a silicon NPN epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers reliable performance with clearly defined electrical characteristics and absolute maximum ratings. Product Attributes Brand: Toshiba Corporation Material: Silicon ...
Silicon PNP Transistor UTC 2SB1116L-G-T92-B Featuring 50 Volt VCEO and 1 Amp Collector Current Rating
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A is a PNP Epitaxial Silicon Transistor designed as a complement to the UTC 2SD1616/A. It is suitable for various electronic applications requiring a PNP transistor with specific voltage and current ratings.Product AttributesBrand: UNISONIC ...
Power Amplification Transistor TOSHIBA TTC011B Q S Silicon NPN Epitaxial with 230V Collector Voltage
Product OverviewThe TTC011B is a silicon NPN epitaxial bipolar transistor designed for power and audio-frequency amplification applications. It features a high collector voltage of 230V, low collector output capacitance of 20pF, and a high transition frequency of 100MHz. It is complementary to the ...
Switching regulator transistor UTC 2SC5353L-TF3-T high voltage NPN silicon type for DC DC converter
UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTORThe 2SC5353 is a high voltage NPN silicon transistor designed for switching regulator and high voltage switching applications, as well as high-speed DC-DC converter applications. It features excellent switching times with a typical rise ...
Low Saturation Voltage NPN Silicon Transistor UTC 2SC2655G-Y-AE3-R for Power Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SC2655 is an NPN Silicon Transistor designed for power amplifier and power switching applications. It features low saturation voltage (VCE(SAT)= 0.5V Max.) and high-speed switching time (TSTG=1.0s Typ.).Product AttributesBrand: UNISONIC TECHNOLOGIE...
High Voltage NPN Bipolar Transistor TOSHIBA 2SC2712-GR TE85L F for Low Frequency and Audio Amplifiers
Product OverviewThe 2SC2712 is a silicon NPN epitaxial bipolar transistor, first produced in October 1982. It is designed for low-frequency amplifiers, audio frequency general-purpose amplification, and AM amplifiers. Key features include high voltage (VCEO = 50 V), high collector current (IC = 150 ...
Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F Designed for High Frequency RF and IF Amplification
Product Overview The TOSHIBA 2SC2714 is a silicon NPN epitaxial planar type transistor utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0.7 pF typ.) and a ...
PNP Silicon Epitaxial Transistor UTC 2SA1020L-Y-T9N-B for Power Amplifier and Switching Applications
Product OverviewThe UTC 2SA1020 is a PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage of -0.5V (max) at -1A and high-speed switching time of 1.0s (typ). It is a complement to the UTC 2SC2655.Product ...
PNP epitaxial silicon transistor UTC 2SA733G-P-AE3-R suitable for low frequency amplifier applications
Product OverviewThe UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplifier applications. It offers high hFE linearity and is the complementary counterpart to the 2SC945 transistor. This device is suitable for general-purpose amplification.Product AttributesBrand: ...
Silicon bipolar epitaxial transistor TOSHIBA HN1B04FU-YLF with 150 milliamp collector current and 50 volt rating
Product OverviewThe HN1B04FU is a silicon bipolar epitaxial transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = 50 V for Q1, -50 V for Q2) and high collector current (IC = 150 mA max) capabilities, along with excellent hFE linearity. This device is AEC-Q101 ...
TOSHIBA 2SC4116-BL TE85L F Silicon NPN Transistor for Performance in Audio and AM Amplifier Circuits
2SC4116 Bipolar TransistorThe 2SC4116 is a silicon NPN epitaxial transistor designed for low-frequency amplification, audio frequency general purpose amplification, and AM amplifier applications. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE ...
Silicon NPN Epitaxial Transistor TOSHIBA 2SC2712-GR LXHF for Audio Frequency Amplifier Applications
2SC2712 Bipolar TransistorThe 2SC2712 is a silicon NPN epitaxial transistor designed for low-frequency and general-purpose audio frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. The ...
Audio Frequency Amplifier and Switching Transistor TOSHIBA 2SA1182-Y LF Silicon PNP Epitaxial Device
Product OverviewThe TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. This device is AEC-Q101 Qualified and features excellent ...
TOSHIBA HN4C06J-BL TE85L F Audio Frequency Amplifier Transistor Silicon NPN Epitaxial Type Component
Product OverviewThe TOSHIBA HN4C06J is a Silicon NPN Epitaxial Type transistor utilizing the PCT Process, designed for general-purpose audio frequency amplifier applications. It offers high voltage capability (VCEO = 120V), high and linear DC current gain (hFE), low noise (NF = 1dB typ.), making it ...
TOSHIBA 2SA1586-Y LF Bipolar Transistor for High Collector Current and Audio Frequency Amplification
Product OverviewThe 2SA1586 is a silicon PNP epitaxial bipolar transistor designed for low-frequency and general-purpose audio frequency amplifier applications. It offers high voltage, high collector current, and excellent hFE linearity, making it a versatile component for various electronic designs...
Power Amplifier Voltage Amplifier Silicon NPN Transistor UTC 2SC2881G-Y-AB3-R with 120V VCEO and 120MHz fT
Product Overview The 2SC2881 is an NPN Silicon Transistor from Unisonic Technologies Co., Ltd, designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO=120V) and a high transition frequency (fT=120MHz typ.). It is complementary to the 2SA1201 ...
Silicon PNP Transistor UTC 2SB649AG C TN3 R Suitable for Complementary Pair Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB649/A is a PNP Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SD669/A for low-frequency power amplifiers.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., ...
silicon NPN transistor TOSHIBA 2SC5810 TE12L F ideal for DC DC converter and fast switching circuits
Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications. It is suitable for DC-DC converters and strobe applications, offering high DC current gain (hFE = 400 to 1000), low collector-emitter saturation voltage (VCE (sat) = 0.17 V max), ...
