Single Bipolar Transistors
Low Saturation Voltage PNP Darlington Transistor UTC UB1580G-AB3-R Ideal for Amplifier and Switching
Product OverviewThe UTC UB1580 is a PNP Darlington transistor designed for general purpose amplifier and low speed switching applications. It offers a high Collector-Emitter Voltage (VCEO) of -150V and a Collector Dissipation (PC MAX) of 600mW. Key advantages include low collector-emitter saturation voltage.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Name: UB1580Type: PNP EPITAXIAL PLANAR TRANSISTORCertifications: Lead Free, Halogen FreeTechnical Specificat
Low Frequency Amplifier Transistor TOSHIBA 2SC4738-GR LF Silicon NPN Epitaxial Type with SSM Package
Product OverviewThe 2SC4738 is a silicon NPN epitaxial transistor designed for low-frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. This device is AEC-Q101 qualified and comes in a small SSM package.Product AttributesBrand: ToshibaType: Silicon NPN Epitaxial TypeCertifications: AEC-Q101 qualifiedComplementary to: 2SA1832Package: SSMTechnical SpecificationsOrd
Power Switching Silicon PNP Transistor TOSHIBA TTA008B Q with High DC Current Gain and Fast Response
Product OverviewThe TTA008B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and power switching applications. It features high DC current gain, low collector-emitter saturation voltage, and high-speed switching capabilities. It is complementary to the TTC015B.Product AttributesBrand: TOSHIBAMaterial: Silicon PNP EpitaxialPackaging: TO-126NCertifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]Technical SpecificationsCharacteristicsSymbolRatingUni
TOSHIBA 2SC2873-Y TE12L CF power amplifier transistor silicon NPN epitaxial type with fast switching
Product OverviewThe TOSHIBA 2SC2873 is a silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage of 0.5 V (max) at 1 A, high-speed switching time of 1.0 s (typ.), and is housed in a small flat package. This transistor is complementary to the 2SA1213.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Transistor (PCT Process)Complementary to: 2SA1213Package: Small flat package (2-5K1A)Weight:
High Speed Switching Silicon Transistor UTC 2SC5569G-AB3-R Suitable for Relay Motor and Lamp Drivers
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTORThe 2SC5569 is an NPN silicon transistor designed for DC/DC converter applications. It features high current capacitance, low collector-to-emitter saturation voltage, high-speed switching, and high allowable power dissipation. It is complementary to the 2SA2016 and suitable for relay drivers, lamp drivers, motor drivers, and strobes.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertificatio
Silicon PNP transistor UTC 2SA733L-P-T92-B designed for low frequency amplification and complementary
Product OverviewThe UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplification. It offers high hFE linearity and is a complementary part to the 2SC945. This transistor is suitable for various amplification applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconType: PNP Epitaxial TransistorCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolRatingUnitConditionsCollector-Base VoltageVCBO
Medium Speed Switching and Audio Frequency Amplification Using UTC MMBT1616AG-G-AE3-R NPN Transistor
Product OverviewThe MMBT1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications. Packaged in a SOT-23 (JEDEC TO-236) case, it offers reliable performance for various electronic circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: Epitaxial SiliconCertifications: Lead Free, Halogen Free (for specific order numbers)Technical SpecificationsParameterSymbolMMBT1616MMBT1616AUnitTest
High speed switching transistor UTC 2SD1816L-R-TN3-R in small TO 252 package for electronic circuits
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, a small and slim package for compact designs, high fT, and fast switching speeds.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Type: NPN PLANAR TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin
High voltage NPN transistor UTC 2SC1623G-L6-AE3-R suitable for audio frequency amplifier applications
Product OverviewThe UTC 2SC1623 is a NPN silicon transistor utilizing UTC's advanced technology. It offers high DC current gain and high breakdown voltage, making it suitable for general-purpose amplifier applications in audio frequency circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN SILICON TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector to Base VoltageVCBO60VCollector
High Current Gain NPN Darlington Transistor UTC BTC1510F3L-TN3-R Suitable for Amplifier Applications
Product OverviewThe UTC BTC1510F3 is a NPN Epitaxial Planar Transistor designed as a NPN Darlington transistor for general purpose amplifier and low speed switching applications. It offers very high BVCEO, very low VCE(SAT), and very high current gain.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDOrigin: Taiwan (implied by website domain)Certifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentLead FreeHalogen FreeBTC1510F3L
Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit
Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable NPN amplification and switching capabilities.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN Silicon TransistorCertifications: Lead Free, Halogen FreeTechnical
TOSHIBA TTA006B Q PNP Bipolar Transistor Featuring Low Output Capacitance for Amplifier Applications
Product OverviewThe TTA006B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and audio-frequency amplifier applications. It features a high collector voltage of -230 V (min), small collector output capacitance (30 pF typ.), and a high transition frequency (70 MHz typ.). It is complementary to the TTC011B.Product AttributesBrand: ToshibaMaterial: SiliconType: PNP Epitaxial Bipolar TransistorCertifications: RoHS CompatibleTechnical SpecificationsCharac
Silicon Transistor TOSHIBA 2SC4213-B TE85L F with Low Cut Off Current and High Gain Characteristics
Product OverviewThe TOSHIBA 2SC4213 is a silicon NPN epitaxial transistor designed for muting and switching applications. It features high emitter-base voltage (VEBO = 25 V min), high reverse hFE (150 typ.), low on resistance (1 typ.), and high DC current gain (200 to 1200). Its small package makes it suitable for various electronic designs.Product AttributesBrand: TOSHIBAOrigin: Japan (implied by TOSHIBA)Material: SiliconPackage: SC-70 (JEITA/JEITA)Weight: 0.006 g (typ.
Power DIP packaged ST L6221AS quad Darlington switch with 50 volts output voltage and low turn on delay time
L6221 Quad Darlington SwitchThe L6221 is a monolithic quad Darlington switch designed for high current, high voltage switching applications. It features four non-inverting inputs with a common enable control, offering TTL-compatible inputs and very low saturation voltage. Each switch includes an open-collector Darlington transistor and a fast recirculation diode, making it suitable for applications with inductive loads. The emitters are commoned, and any number of inputs and
Silicon Transistor UTC 2SC4617G-R-AE3-R with SOT 23 Package and 200 Milliwatt Collector Power Dissipation
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SC4617 is an NPN Silicon Transistor designed for general-purpose applications. It features low output capacitance (Cob=2.0pF typ) and complements the UTC 2SA1774. This transistor is suitable for various electronic circuits requiring a reliable general-purpose switching or amplification component.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Halogen FreeTechnical SpecificationsOrderin
Electronic Silicon Transistor UTC 2SB1116AG-G-T92-B PNP Type with Total Power Dissipation 750 Milliwatts
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A is a PNP epitaxial silicon transistor designed as a complement to the UTC 2SD1616/A. It is suitable for various electronic applications requiring a PNP transistor with specific voltage, current, and gain characteristics.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbol2SB11162SB1116AUnitConditionsNotesCollector to
General Purpose NPN Silicon Transistor UTC 2SD669AL-C-T60-K Suitable for Power Amplifier Electronics
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentPackingMarkingCollector-Base Voltage (VCBO)Collector
NPN Silicon Transistor UTC 2SD669AG-C-AB3-R Suitable for Low Frequency Power Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose applications. It serves as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentCollector-Emitter VoltagehFE RankGreen Package2SD669xG-x-AA3-RSOT-223B C E120V
Epitaxial planar NPN transistor UTC 2SD1664G-Q-AB3-R optimized for medium power switching applications
Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable amplification and switching.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN Silicon TransistorCertifications: Lead Free, Halogen FreeTechnical SpecificationsParamet
General Purpose Amplifier Transistor TOSHIBA 2SC2713-GR LXGF Silicon NPN with Low Noise and High hFE
Product OverviewThe TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor designed for audio frequency general purpose amplifier applications. It is AEC-Q101 qualified and features high voltage capability (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), low noise (NF = 1dB typ.), and is complementary to the 2SA1163. The transistor comes in a small package.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial TransistorProcess: PCT processCertifications:
