Single Bipolar Transistors
Low Saturation Voltage PNP Darlington Transistor UTC UB1580G-AB3-R Ideal for Amplifier and Switching
Product OverviewThe UTC UB1580 is a PNP Darlington transistor designed for general purpose amplifier and low speed switching applications. It offers a high Collector-Emitter Voltage (VCEO) of -150V and a Collector Dissipation (PC MAX) of 600mW. Key advantages include low collector-emitter saturation ...
Low Frequency Amplifier Transistor TOSHIBA 2SC4738-GR LF Silicon NPN Epitaxial Type with SSM Package
Product OverviewThe 2SC4738 is a silicon NPN epitaxial transistor designed for low-frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. This device is AEC-Q101 qualified and comes in a ...
Power Switching Silicon PNP Transistor TOSHIBA TTA008B Q with High DC Current Gain and Fast Response
Product OverviewThe TTA008B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and power switching applications. It features high DC current gain, low collector-emitter saturation voltage, and high-speed switching capabilities. It is complementary to the TTC015B.Product ...
TOSHIBA 2SC2873-Y TE12L CF power amplifier transistor silicon NPN epitaxial type with fast switching
Product OverviewThe TOSHIBA 2SC2873 is a silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage of 0.5 V (max) at 1 A, high-speed switching time of 1.0 s (typ.), and is housed in a small flat package. This transistor is ...
High Speed Switching Silicon Transistor UTC 2SC5569G-AB3-R Suitable for Relay Motor and Lamp Drivers
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTORThe 2SC5569 is an NPN silicon transistor designed for DC/DC converter applications. It features high current capacitance, low collector-to-emitter saturation voltage, high-speed switching, and high allowable power dissipation. It is ...
Silicon PNP transistor UTC 2SA733L-P-T92-B designed for low frequency amplification and complementary
Product OverviewThe UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplification. It offers high hFE linearity and is a complementary part to the 2SC945. This transistor is suitable for various amplification applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO....
Medium Speed Switching and Audio Frequency Amplification Using UTC MMBT1616AG-G-AE3-R NPN Transistor
Product OverviewThe MMBT1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications. Packaged in a SOT-23 (JEDEC TO-236) case, it offers reliable performance for various electronic circuits.Product AttributesBrand: UNISONIC ...
High speed switching transistor UTC 2SD1816L-R-TN3-R in small TO 252 package for electronic circuits
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, a small and slim package for compact designs, high fT, and fast switching speeds...
High voltage NPN transistor UTC 2SC1623G-L6-AE3-R suitable for audio frequency amplifier applications
Product OverviewThe UTC 2SC1623 is a NPN silicon transistor utilizing UTC's advanced technology. It offers high DC current gain and high breakdown voltage, making it suitable for general-purpose amplifier applications in audio frequency circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., ...
High Current Gain NPN Darlington Transistor UTC BTC1510F3L-TN3-R Suitable for Amplifier Applications
Product OverviewThe UTC BTC1510F3 is a NPN Epitaxial Planar Transistor designed as a NPN Darlington transistor for general purpose amplifier and low speed switching applications. It offers very high BVCEO, very low VCE(SAT), and very high current gain.Product AttributesBrand: UNISONIC TECHNOLOGIES ...
Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit
Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable NPN ...
TOSHIBA TTA006B Q PNP Bipolar Transistor Featuring Low Output Capacitance for Amplifier Applications
Product OverviewThe TTA006B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and audio-frequency amplifier applications. It features a high collector voltage of -230 V (min), small collector output capacitance (30 pF typ.), and a high transition frequency (70 MHz typ.). It ...
Silicon Transistor TOSHIBA 2SC4213-B TE85L F with Low Cut Off Current and High Gain Characteristics
Product OverviewThe TOSHIBA 2SC4213 is a silicon NPN epitaxial transistor designed for muting and switching applications. It features high emitter-base voltage (VEBO = 25 V min), high reverse hFE (150 typ.), low on resistance (1 typ.), and high DC current gain (200 to 1200). Its small package makes ...
Power DIP packaged ST L6221AS quad Darlington switch with 50 volts output voltage and low turn on delay time
L6221 Quad Darlington SwitchThe L6221 is a monolithic quad Darlington switch designed for high current, high voltage switching applications. It features four non-inverting inputs with a common enable control, offering TTL-compatible inputs and very low saturation voltage. Each switch includes an ...
Silicon Transistor UTC 2SC4617G-R-AE3-R with SOT 23 Package and 200 Milliwatt Collector Power Dissipation
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SC4617 is an NPN Silicon Transistor designed for general-purpose applications. It features low output capacitance (Cob=2.0pF typ) and complements the UTC 2SA1774. This transistor is suitable for various electronic circuits requiring a reliable ...
Electronic Silicon Transistor UTC 2SB1116AG-G-T92-B PNP Type with Total Power Dissipation 750 Milliwatts
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A is a PNP epitaxial silicon transistor designed as a complement to the UTC 2SD1616/A. It is suitable for various electronic applications requiring a PNP transistor with specific voltage, current, and gain characteristics.Product AttributesB...
General Purpose NPN Silicon Transistor UTC 2SD669AL-C-T60-K Suitable for Power Amplifier Electronics
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES ...
NPN Silicon Transistor UTC 2SD669AG-C-AB3-R Suitable for Low Frequency Power Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose applications. It serves as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: ...
Epitaxial planar NPN transistor UTC 2SD1664G-Q-AB3-R optimized for medium power switching applications
Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable ...
General Purpose Amplifier Transistor TOSHIBA 2SC2713-GR LXGF Silicon NPN with Low Noise and High hFE
Product OverviewThe TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor designed for audio frequency general purpose amplifier applications. It is AEC-Q101 qualified and features high voltage capability (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), low noise (NF = 1dB typ.), and ...
