Single Bipolar Transistors
Audio Frequency Amplifier and Switching Transistor TOSHIBA 2SA1182-Y LF Silicon PNP Epitaxial Device
Product OverviewThe TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. This device is AEC-Q101 Qualified and features excellent hFE linearity, with a minimum hFE (2) of 25 at VCE = -6 V and IC = -400 mA. It is complementary to the 2SC2859.Product AttributesBrand: TOSHIBAType: Silicon PNP Epitaxial
TOSHIBA HN4C06J-BL TE85L F Audio Frequency Amplifier Transistor Silicon NPN Epitaxial Type Component
Product OverviewThe TOSHIBA HN4C06J is a Silicon NPN Epitaxial Type transistor utilizing the PCT Process, designed for general-purpose audio frequency amplifier applications. It offers high voltage capability (VCEO = 120V), high and linear DC current gain (hFE), low noise (NF = 1dB typ.), making it suitable for demanding audio circuits.Product AttributesBrand: TOSHIBAMaterial: Silicon NPN Epitaxial Type (PCT Process)Applications: Audio Frequency General Purpose AmplifierTechn
TOSHIBA 2SA1586-Y LF Bipolar Transistor for High Collector Current and Audio Frequency Amplification
Product OverviewThe 2SA1586 is a silicon PNP epitaxial bipolar transistor designed for low-frequency and general-purpose audio frequency amplifier applications. It offers high voltage, high collector current, and excellent hFE linearity, making it a versatile component for various electronic designs. This transistor is AEC-Q101 qualified and is complementary to the 2SC4116.Product AttributesBrand: ToshibaCertifications: AEC-Q101 qualifiedPackage: USMTechnical SpecificationsOr
Power Amplifier Voltage Amplifier Silicon NPN Transistor UTC 2SC2881G-Y-AB3-R with 120V VCEO and 120MHz fT
Product Overview The 2SC2881 is an NPN Silicon Transistor from Unisonic Technologies Co., Ltd, designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO=120V) and a high transition frequency (fT=120MHz typ.). It is complementary to the 2SA1201 transistor. Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LTD Material: Silicon Type: NPN Transistor Certifications: Lead Free, Halogen Free Technical Specifications Ordering
Silicon PNP Transistor UTC 2SB649AG C TN3 R Suitable for Complementary Pair Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB649/A is a PNP Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SD669/A for low-frequency power amplifiers.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbol2SB6492SB649AUnitConditionsCollector-Base VoltageVCBO-180VCollector-Emitter VoltageVCE
silicon NPN transistor TOSHIBA 2SC5810 TE12L F ideal for DC DC converter and fast switching circuits
Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications. It is suitable for DC-DC converters and strobe applications, offering high DC current gain (hFE = 400 to 1000), low collector-emitter saturation voltage (VCE (sat) = 0.17 V max), and fast switching speeds (tf = 85 ns typ.).Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial TransistorOrigin: Japan (implied by TOSHIBA)Certifications: RoHS COMPATIBLE
Low Saturation Voltage PNP Darlington Transistor UTC UB1580G-AB3-R Ideal for Amplifier and Switching
Product OverviewThe UTC UB1580 is a PNP Darlington transistor designed for general purpose amplifier and low speed switching applications. It offers a high Collector-Emitter Voltage (VCEO) of -150V and a Collector Dissipation (PC MAX) of 600mW. Key advantages include low collector-emitter saturation voltage.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Name: UB1580Type: PNP EPITAXIAL PLANAR TRANSISTORCertifications: Lead Free, Halogen FreeTechnical Specificat
Low Frequency Amplifier Transistor TOSHIBA 2SC4738-GR LF Silicon NPN Epitaxial Type with SSM Package
Product OverviewThe 2SC4738 is a silicon NPN epitaxial transistor designed for low-frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. This device is AEC-Q101 qualified and comes in a small SSM package.Product AttributesBrand: ToshibaType: Silicon NPN Epitaxial TypeCertifications: AEC-Q101 qualifiedComplementary to: 2SA1832Package: SSMTechnical SpecificationsOrd
Power Switching Silicon PNP Transistor TOSHIBA TTA008B Q with High DC Current Gain and Fast Response
Product OverviewThe TTA008B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and power switching applications. It features high DC current gain, low collector-emitter saturation voltage, and high-speed switching capabilities. It is complementary to the TTC015B.Product AttributesBrand: TOSHIBAMaterial: Silicon PNP EpitaxialPackaging: TO-126NCertifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]Technical SpecificationsCharacteristicsSymbolRatingUni
TOSHIBA 2SC2873-Y TE12L CF power amplifier transistor silicon NPN epitaxial type with fast switching
Product OverviewThe TOSHIBA 2SC2873 is a silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage of 0.5 V (max) at 1 A, high-speed switching time of 1.0 s (typ.), and is housed in a small flat package. This transistor is complementary to the 2SA1213.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Transistor (PCT Process)Complementary to: 2SA1213Package: Small flat package (2-5K1A)Weight:
High Speed Switching Silicon Transistor UTC 2SC5569G-AB3-R Suitable for Relay Motor and Lamp Drivers
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTORThe 2SC5569 is an NPN silicon transistor designed for DC/DC converter applications. It features high current capacitance, low collector-to-emitter saturation voltage, high-speed switching, and high allowable power dissipation. It is complementary to the 2SA2016 and suitable for relay drivers, lamp drivers, motor drivers, and strobes.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertificatio
Silicon PNP transistor UTC 2SA733L-P-T92-B designed for low frequency amplification and complementary
Product OverviewThe UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplification. It offers high hFE linearity and is a complementary part to the 2SC945. This transistor is suitable for various amplification applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconType: PNP Epitaxial TransistorCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolRatingUnitConditionsCollector-Base VoltageVCBO
Medium Speed Switching and Audio Frequency Amplification Using UTC MMBT1616AG-G-AE3-R NPN Transistor
Product OverviewThe MMBT1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications. Packaged in a SOT-23 (JEDEC TO-236) case, it offers reliable performance for various electronic circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: Epitaxial SiliconCertifications: Lead Free, Halogen Free (for specific order numbers)Technical SpecificationsParameterSymbolMMBT1616MMBT1616AUnitTest
High speed switching transistor UTC 2SD1816L-R-TN3-R in small TO 252 package for electronic circuits
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, a small and slim package for compact designs, high fT, and fast switching speeds.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Type: NPN PLANAR TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin
High voltage NPN transistor UTC 2SC1623G-L6-AE3-R suitable for audio frequency amplifier applications
Product OverviewThe UTC 2SC1623 is a NPN silicon transistor utilizing UTC's advanced technology. It offers high DC current gain and high breakdown voltage, making it suitable for general-purpose amplifier applications in audio frequency circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN SILICON TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector to Base VoltageVCBO60VCollector
High Current Gain NPN Darlington Transistor UTC BTC1510F3L-TN3-R Suitable for Amplifier Applications
Product OverviewThe UTC BTC1510F3 is a NPN Epitaxial Planar Transistor designed as a NPN Darlington transistor for general purpose amplifier and low speed switching applications. It offers very high BVCEO, very low VCE(SAT), and very high current gain.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDOrigin: Taiwan (implied by website domain)Certifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentLead FreeHalogen FreeBTC1510F3L
Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit
Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable NPN amplification and switching capabilities.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN Silicon TransistorCertifications: Lead Free, Halogen FreeTechnical
TOSHIBA TTA006B Q PNP Bipolar Transistor Featuring Low Output Capacitance for Amplifier Applications
Product OverviewThe TTA006B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and audio-frequency amplifier applications. It features a high collector voltage of -230 V (min), small collector output capacitance (30 pF typ.), and a high transition frequency (70 MHz typ.). It is complementary to the TTC011B.Product AttributesBrand: ToshibaMaterial: SiliconType: PNP Epitaxial Bipolar TransistorCertifications: RoHS CompatibleTechnical SpecificationsCharac
Silicon Transistor TOSHIBA 2SC4213-B TE85L F with Low Cut Off Current and High Gain Characteristics
Product OverviewThe TOSHIBA 2SC4213 is a silicon NPN epitaxial transistor designed for muting and switching applications. It features high emitter-base voltage (VEBO = 25 V min), high reverse hFE (150 typ.), low on resistance (1 typ.), and high DC current gain (200 to 1200). Its small package makes it suitable for various electronic designs.Product AttributesBrand: TOSHIBAOrigin: Japan (implied by TOSHIBA)Material: SiliconPackage: SC-70 (JEITA/JEITA)Weight: 0.006 g (typ.
Power DIP packaged ST L6221AS quad Darlington switch with 50 volts output voltage and low turn on delay time
L6221 Quad Darlington SwitchThe L6221 is a monolithic quad Darlington switch designed for high current, high voltage switching applications. It features four non-inverting inputs with a common enable control, offering TTL-compatible inputs and very low saturation voltage. Each switch includes an open-collector Darlington transistor and a fast recirculation diode, making it suitable for applications with inductive loads. The emitters are commoned, and any number of inputs and
