Single Bipolar Transistors

Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD882 is an NPN Silicon Transistor designed for medium power, low voltage applications. It features high current output up to 3A and low saturation voltage, making it a complementary part to the 2SB772. This transistor is suitable for use in audio power amplifiers, DC-DC converters, and voltage regulators.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical

Product OverviewThe UTC 2SC5006 is an NPN epitaxial silicon transistor utilizing UTC's advanced technology. It offers a low noise figure, high DC current gain, and high current capability, enabling a wide dynamic range and excellent linearity. This transistor is well-suited for low noise and small signal amplifiers across the VHF to UHF frequency bands.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: Silicon EpitaxialCertifications: Lead Free, Halogen

Product OverviewThe 2SA1943N is a silicon PNP triple-diffused bipolar transistor designed for power amplification applications. It features a high collector voltage of -230 V (min) and is complementary to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers.Product AttributesBrand: TOSHIBAProduct Type: Bipolar TransistorsMaterial: SiliconType: PNP Triple-DiffusedCertifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS

Product OverviewThe UTC 2SB772S is a medium power, low voltage PNP silicon transistor designed for audio power amplifier, DC-DC converter, and voltage regulator applications. It offers a high current output up to 3A, low saturation voltage, and is a complement to the 2SD882S.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Type: PNP SILICON TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolTest ConditionsRatingUnitCollector

TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high current capabilities, with a VCEO of 50 V and IC of 150 mA (max). It is complementary to the TMBT3906. Product Attributes Brand: TOSHIBA Type: Silicon NPN Epitaxial Transistor Complementary to: TMBT3906 Start of commercial production: 2015-01-08 Technical

Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SA1797 is a PNP Silicon Transistor designed for power applications. It features low saturation voltage with a VCE(SAT) of -0.35V (MAX) at IC / IB = -1A / -50mA and excellent DC current gain characteristics.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentCollector-Base Voltage (VCBO)Collector-Emitter

Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications, including DC-DC converters and strobe circuits. It features high DC current gain (hFE = 400 to 1000 at IC = 0.1 A), low collector-emitter saturation voltage (VCE(sat) = 0.17 V max), and fast switching speeds (tf = 85 ns typ.).Product AttributesBrand: TOSHIBAMaterial: SiliconType: NPN Epitaxial TransistorOrigin: Japan (implied by TOSHIBA)Certifications:

Product Overview The BC817 is an NPN transistor designed for general AF applications, offering high collector current, high current gain, and a low collector-emitter saturation voltage. It is available in various ranks, each with a specific DC current gain range and marking code. This transistor is suitable for applications requiring efficient current handling and amplification. Product Attributes Type: NPN Transistor Package: SOT-323 Brand (implied): slkormicro Technical

Product Overview This PNP transistor is designed for surface mount applications, offering high DC current gain. It is suitable for various electronic circuits requiring efficient amplification and switching capabilities. Product Attributes Package Type: SOT-323 Marking Code: FR Model Number: S9015W Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Maximum Ratings (Ta=25 unless otherwise noted) Collector-Base Voltage VCBO -50 V Collector-Emitter

Product OverviewThe TTC004B is a silicon NPN epitaxial bipolar transistor designed for audio-frequency amplifiers. It features a high collector voltage (VCEO = 160 V min), complementary to the TTA004B, low collector output capacitance (Cob = 12 pF typ.), and a high transition frequency (fT = 100 MHz typ.).Product AttributesBrand: ToshibaMaterial: SiliconType: NPN Epitaxial Bipolar TransistorCertifications: RoHS CompatibleTechnical SpecificationsCharacteristicsSymbolTest

Product OverviewThe TOSHIBA 2SA1832 is a silicon PNP epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage and high current capabilities with VCEO = -50 V and IC = -150 mA (max). Key features include excellent hFE linearity, high hFE values, and a complementary relationship with the 2SC4738. Its small package makes it suitable for various electronic applications.Product AttributesBrand:

Product Overview The 2SD596 is an NPN transistor offering high DC current gain, making it a complementary part to the 2SB624. It is designed for applications requiring efficient current amplification and is suitable for various electronic circuits. Product Attributes Brand: slkormicro Product Type: NPN Transistors Package: SOT-23 Technical Specifications Parameter Symbol Rating Unit Test Conditions Min Typ Max Absolute Maximum Ratings (Ta = 25) Collector - Base Voltage VCBO

Product OverviewThe TOSHIBA 2SA1313 is a silicon PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. Its small package (TO-236MOD/SC-59) makes it suitable for space-constrained designs.Product AttributesBrand: TOSHIBAType: Silicon PNP Epitaxial

Product OverviewThe 2SC2714 is a Silicon NPN Epitaxial Planar Type transistor manufactured by TOSHIBA, utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0.7 pF typ.) and a low noise figure (NF = 2.5dB typ.).Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Planar TypeProcess: PCT processPackage: JEDEC TO-236 / JEITA SC-59

Product OverviewThe BUL49D and BULB49D are high voltage fast-switching NPN power transistors manufactured using high voltage multi-epitaxial planar technology. They offer high voltage capability, low spread of dynamic parameters, and very high switching speed, making them suitable for applications such as electronic transformers for halogen lamps and low-power flyback and forward converters.Product AttributesBrand: STCertifications: ECOPACK (for packages)Technical Specificati

Product Overview The MMBTA55 is a plastic-encapsulated transistor designed for various electronic applications. It features a collector current capability of -0.5A and a collector-emitter voltage of -60V, making it suitable for general-purpose amplification and switching tasks. This transistor is housed in a SOT-23 package, offering a compact solution for space-constrained designs. Product Attributes Brand: SLKOR Micro Package Type: SOT-23 Technical Specifications Parameter

Product Overview The UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 is an NPN silicon transistor designed for high-voltage switching applications. It features high breakdown voltage, large current capacity, and fast switching times, making it suitable for high-density, small-sized hybrid ICs. Product Attributes Brand: UNISONIC TECHNOLOGIES CO.,LTD Model: 2SC3647 Material: Silicon Package: SOT-89 Technical Specifications Parameter Symbol Rating Unit Test Conditions Collector to Base

Product OverviewThe RN1301 to RN1306 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. Their integrated bias resistor simplifies circuit design, reduces component count, and decreases system size and assembly time. They are AEC-Q101 qualified and complementary to the RN2301 to RN2306 series.Product AttributesBrand: ToshibaType: Silicon NPN

Product Overview The BC856-BC858 series are PNP transistors ideally suited for automatic insertion, switching, and AF amplifier applications. These devices offer a range of electrical characteristics suitable for various circuit designs. Product Attributes Brand: slkormicro Product Type: PNP Transistors Package: SOT-23 Technical Specifications Parameter Symbol BC856 BC857 BC858 Unit Absolute Maximum Ratings (Ta = 25) Collector - Base Voltage VCBO -80 -50 -30 V Collector -

Product OverviewThe TOSHIBA MT3S111TU is a Silicon-Germanium NPN Epitaxial Planar Type transistor designed for VHF-UHF low-noise and low-distortion amplifier applications. It offers a typical low-noise figure of 0.85 dB at 1 GHz and a typical insertion gain of 12.5 dB at 1 GHz, making it suitable for high-frequency amplification.Product AttributesBrand: TOSHIBAType: Silicon-Germanium NPN Epitaxial Planar Type TransistorApplication: VHF-UHF Low-Noise, Low-Distortion AmplifierO