Single Bipolar Transistors
NPN transistor UTC 2SD882L-P-T60-K suitable for in audio amplifiers voltage regulators and DC-DC converter circuits
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD882 is an NPN Silicon Transistor designed for medium power, low voltage applications. It features high current output up to 3A and low saturation voltage, making it a complementary part to the 2SB772. This transistor is suitable for use in audio ...
Low noise NPN epitaxial silicon transistor UTC 2SC5006G-AN3-R suitable for VHF UHF amplifier applications
Product OverviewThe UTC 2SC5006 is an NPN epitaxial silicon transistor utilizing UTC's advanced technology. It offers a low noise figure, high DC current gain, and high current capability, enabling a wide dynamic range and excellent linearity. This transistor is well-suited for low noise and small ...
PNP Triple Diffused Bipolar Transistor TOSHIBA 2SA1943N S1 E S Silicon Type for Power Amplification
Product OverviewThe 2SA1943N is a silicon PNP triple-diffused bipolar transistor designed for power amplification applications. It features a high collector voltage of -230 V (min) and is complementary to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio ...
Medium power PNP silicon transistor UTC 2SB772SG-P-AB3-R optimized for audio amplifier and voltage regulator
Product OverviewThe UTC 2SB772S is a medium power, low voltage PNP silicon transistor designed for audio power amplifier, DC-DC converter, and voltage regulator applications. It offers a high current output up to 3A, low saturation voltage, and is a complement to the 2SD882S.Product AttributesBrand: ...
TOSHIBA TMBT3904 LM Silicon NPN Epitaxial Transistor Suitable for Audio Frequency Amplifier Circuits
TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high current capabilities, with a VCEO of 50 V and IC of 150 mA (max). It is ...
PNP Silicon Transistor UTC 2SA1797G-B-AB3-R with Low Saturation Voltage and Excellent DC Current Gain
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SA1797 is a PNP Silicon Transistor designed for power applications. It features low saturation voltage with a VCE(SAT) of -0.35V (MAX) at IC / IB = -1A / -50mA and excellent DC current gain characteristics.Product AttributesBrand: UNISONIC ...
TOSHIBA 2SC5810 T2LXG ZF Silicon NPN Epitaxial Transistor with High Gain and Low Saturation Voltage
Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications, including DC-DC converters and strobe circuits. It features high DC current gain (hFE = 400 to 1000 at IC = 0.1 A), low collector-emitter saturation voltage (VCE(sat) = 0.17 V ...
NPN Transistor Slkor BC817-40W SOT-323 Package High Collector Current and Low Saturation Voltage
Product Overview The BC817 is an NPN transistor designed for general AF applications, offering high collector current, high current gain, and a low collector-emitter saturation voltage. It is available in various ranks, each with a specific DC current gain range and marking code. This transistor is ...
High Gain PNP Transistor Slkor S9015W Suitable for Surface Mount Electronic Amplification Circuits
Product Overview This PNP transistor is designed for surface mount applications, offering high DC current gain. It is suitable for various electronic circuits requiring efficient amplification and switching capabilities. Product Attributes Package Type: SOT-323 Marking Code: FR Model Number: S9015W ...
Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TTC004B Q for Audio Frequency Amplifier Applications
Product OverviewThe TTC004B is a silicon NPN epitaxial bipolar transistor designed for audio-frequency amplifiers. It features a high collector voltage (VCEO = 160 V min), complementary to the TTA004B, low collector output capacitance (Cob = 12 pF typ.), and a high transition frequency (fT = 100 MHz ...
TOSHIBA 2SA1832-YLF Silicon PNP Transistor Featuring Excellent hFE Linearity and Complementary Pair
Product OverviewThe TOSHIBA 2SA1832 is a silicon PNP epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage and high current capabilities with VCEO = -50 V and IC = -150 mA (max). Key features include excellent ...
High DC Current Gain Slkor 2SD596-DV4 NPN Transistor SOT-23 Package Suitable for Electronic Circuits
Product Overview The 2SD596 is an NPN transistor offering high DC current gain, making it a complementary part to the 2SB624. It is designed for applications requiring efficient current amplification and is suitable for various electronic circuits. Product Attributes Brand: slkormicro Product Type: ...
TOSHIBA 2SA1313-Y LF PNP transistor optimized for driver stage amplifier and switching applications
Product OverviewThe TOSHIBA 2SA1313 is a silicon PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications...
High Frequency Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F with Small Reverse Transfer Capacitance
Product OverviewThe 2SC2714 is a Silicon NPN Epitaxial Planar Type transistor manufactured by TOSHIBA, utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0...
Compact SOT23 Package Slkor MMBTA55 Transistor with 05A Collector Current and 60V Collector Emitter Voltage
Product Overview The MMBTA55 is a plastic-encapsulated transistor designed for various electronic applications. It features a collector current capability of -0.5A and a collector-emitter voltage of -60V, making it suitable for general-purpose amplification and switching tasks. This transistor is ...
High voltage NPN transistor ST BUL49D suitable for flyback converters and halogen lamp transformers
Product OverviewThe BUL49D and BULB49D are high voltage fast-switching NPN power transistors manufactured using high voltage multi-epitaxial planar technology. They offer high voltage capability, low spread of dynamic parameters, and very high switching speed, making them suitable for applications ...
NPN transistor UTC 2SC3647G-R-AB3-R optimized for high voltage switching in small hybrid IC packages
Product Overview The UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 is an NPN silicon transistor designed for high-voltage switching applications. It features high breakdown voltage, large current capacity, and fast switching times, making it suitable for high-density, small-sized hybrid ICs. Product ...
Bias Resistor Built in Silicon NPN Transistor TOSHIBA RN1303 TE85L F for Inverter and Driver Circuits
Product OverviewThe RN1301 to RN1306 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. Their integrated bias resistor simplifies circuit design, reduces component ...
PNP Transistor Slkor BC858B SOT23 Package Suitable for Switching and AF Amplifier Applications
Product Overview The BC856-BC858 series are PNP transistors ideally suited for automatic insertion, switching, and AF amplifier applications. These devices offer a range of electrical characteristics suitable for various circuit designs. Product Attributes Brand: slkormicro Product Type: PNP ...
TOSHIBA MT3S111TU LF Transistor Silicon Germanium NPN for VHF UHF Low Noise Low Distortion Amplifier
Product OverviewThe TOSHIBA MT3S111TU is a Silicon-Germanium NPN Epitaxial Planar Type transistor designed for VHF-UHF low-noise and low-distortion amplifier applications. It offers a typical low-noise figure of 0.85 dB at 1 GHz and a typical insertion gain of 12.5 dB at 1 GHz, making it suitable ...
