Single Bipolar Transistors
Silicon Transistor UTC 2SC4617G-R-AE3-R with SOT 23 Package and 200 Milliwatt Collector Power Dissipation
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SC4617 is an NPN Silicon Transistor designed for general-purpose applications. It features low output capacitance (Cob=2.0pF typ) and complements the UTC 2SA1774. This transistor is suitable for various electronic circuits requiring a reliable general-purpose switching or amplification component.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Halogen FreeTechnical SpecificationsOrderin
Electronic Silicon Transistor UTC 2SB1116AG-G-T92-B PNP Type with Total Power Dissipation 750 Milliwatts
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A is a PNP epitaxial silicon transistor designed as a complement to the UTC 2SD1616/A. It is suitable for various electronic applications requiring a PNP transistor with specific voltage, current, and gain characteristics.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbol2SB11162SB1116AUnitConditionsNotesCollector to
General Purpose NPN Silicon Transistor UTC 2SD669AL-C-T60-K Suitable for Power Amplifier Electronics
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentPackingMarkingCollector-Base Voltage (VCBO)Collector
NPN Silicon Transistor UTC 2SD669AG-C-AB3-R Suitable for Low Frequency Power Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose applications. It serves as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentCollector-Emitter VoltagehFE RankGreen Package2SD669xG-x-AA3-RSOT-223B C E120V
Epitaxial planar NPN transistor UTC 2SD1664G-Q-AB3-R optimized for medium power switching applications
Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable amplification and switching.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN Silicon TransistorCertifications: Lead Free, Halogen FreeTechnical SpecificationsParamet
General Purpose Amplifier Transistor TOSHIBA 2SC2713-GR LXGF Silicon NPN with Low Noise and High hFE
Product OverviewThe TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor designed for audio frequency general purpose amplifier applications. It is AEC-Q101 qualified and features high voltage capability (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), low noise (NF = 1dB typ.), and is complementary to the 2SA1163. The transistor comes in a small package.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial TransistorProcess: PCT processCertifications:
NPN transistor UTC 2SD882L-P-T60-K suitable for in audio amplifiers voltage regulators and DC-DC converter circuits
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD882 is an NPN Silicon Transistor designed for medium power, low voltage applications. It features high current output up to 3A and low saturation voltage, making it a complementary part to the 2SB772. This transistor is suitable for use in audio power amplifiers, DC-DC converters, and voltage regulators.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical
Low noise NPN epitaxial silicon transistor UTC 2SC5006G-AN3-R suitable for VHF UHF amplifier applications
Product OverviewThe UTC 2SC5006 is an NPN epitaxial silicon transistor utilizing UTC's advanced technology. It offers a low noise figure, high DC current gain, and high current capability, enabling a wide dynamic range and excellent linearity. This transistor is well-suited for low noise and small signal amplifiers across the VHF to UHF frequency bands.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: Silicon EpitaxialCertifications: Lead Free, Halogen
PNP Triple Diffused Bipolar Transistor TOSHIBA 2SA1943N S1 E S Silicon Type for Power Amplification
Product OverviewThe 2SA1943N is a silicon PNP triple-diffused bipolar transistor designed for power amplification applications. It features a high collector voltage of -230 V (min) and is complementary to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers.Product AttributesBrand: TOSHIBAProduct Type: Bipolar TransistorsMaterial: SiliconType: PNP Triple-DiffusedCertifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS
Medium power PNP silicon transistor UTC 2SB772SG-P-AB3-R optimized for audio amplifier and voltage regulator
Product OverviewThe UTC 2SB772S is a medium power, low voltage PNP silicon transistor designed for audio power amplifier, DC-DC converter, and voltage regulator applications. It offers a high current output up to 3A, low saturation voltage, and is a complement to the 2SD882S.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Type: PNP SILICON TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolTest ConditionsRatingUnitCollector
TOSHIBA TMBT3904 LM Silicon NPN Epitaxial Transistor Suitable for Audio Frequency Amplifier Circuits
TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high current capabilities, with a VCEO of 50 V and IC of 150 mA (max). It is complementary to the TMBT3906. Product Attributes Brand: TOSHIBA Type: Silicon NPN Epitaxial Transistor Complementary to: TMBT3906 Start of commercial production: 2015-01-08 Technical
PNP Silicon Transistor UTC 2SA1797G-B-AB3-R with Low Saturation Voltage and Excellent DC Current Gain
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SA1797 is a PNP Silicon Transistor designed for power applications. It features low saturation voltage with a VCE(SAT) of -0.35V (MAX) at IC / IB = -1A / -50mA and excellent DC current gain characteristics.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentCollector-Base Voltage (VCBO)Collector-Emitter
TOSHIBA 2SC5810 T2LXG ZF Silicon NPN Epitaxial Transistor with High Gain and Low Saturation Voltage
Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications, including DC-DC converters and strobe circuits. It features high DC current gain (hFE = 400 to 1000 at IC = 0.1 A), low collector-emitter saturation voltage (VCE(sat) = 0.17 V max), and fast switching speeds (tf = 85 ns typ.).Product AttributesBrand: TOSHIBAMaterial: SiliconType: NPN Epitaxial TransistorOrigin: Japan (implied by TOSHIBA)Certifications:
High Gain PNP Transistor Slkor S9015W Suitable for Surface Mount Electronic Amplification Circuits
Product Overview This PNP transistor is designed for surface mount applications, offering high DC current gain. It is suitable for various electronic circuits requiring efficient amplification and switching capabilities. Product Attributes Package Type: SOT-323 Marking Code: FR Model Number: S9015W Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Maximum Ratings (Ta=25 unless otherwise noted) Collector-Base Voltage VCBO -50 V Collector-Emitter
Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TTC004B Q for Audio Frequency Amplifier Applications
Product OverviewThe TTC004B is a silicon NPN epitaxial bipolar transistor designed for audio-frequency amplifiers. It features a high collector voltage (VCEO = 160 V min), complementary to the TTA004B, low collector output capacitance (Cob = 12 pF typ.), and a high transition frequency (fT = 100 MHz typ.).Product AttributesBrand: ToshibaMaterial: SiliconType: NPN Epitaxial Bipolar TransistorCertifications: RoHS CompatibleTechnical SpecificationsCharacteristicsSymbolTest
TOSHIBA 2SA1832-YLF Silicon PNP Transistor Featuring Excellent hFE Linearity and Complementary Pair
Product OverviewThe TOSHIBA 2SA1832 is a silicon PNP epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage and high current capabilities with VCEO = -50 V and IC = -150 mA (max). Key features include excellent hFE linearity, high hFE values, and a complementary relationship with the 2SC4738. Its small package makes it suitable for various electronic applications.Product AttributesBrand:
TOSHIBA 2SA1313-Y LF PNP transistor optimized for driver stage amplifier and switching applications
Product OverviewThe TOSHIBA 2SA1313 is a silicon PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. Its small package (TO-236MOD/SC-59) makes it suitable for space-constrained designs.Product AttributesBrand: TOSHIBAType: Silicon PNP Epitaxial
High Frequency Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F with Small Reverse Transfer Capacitance
Product OverviewThe 2SC2714 is a Silicon NPN Epitaxial Planar Type transistor manufactured by TOSHIBA, utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0.7 pF typ.) and a low noise figure (NF = 2.5dB typ.).Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Planar TypeProcess: PCT processPackage: JEDEC TO-236 / JEITA SC-59
High voltage NPN transistor ST BUL49D suitable for flyback converters and halogen lamp transformers
Product OverviewThe BUL49D and BULB49D are high voltage fast-switching NPN power transistors manufactured using high voltage multi-epitaxial planar technology. They offer high voltage capability, low spread of dynamic parameters, and very high switching speed, making them suitable for applications such as electronic transformers for halogen lamps and low-power flyback and forward converters.Product AttributesBrand: STCertifications: ECOPACK (for packages)Technical Specificati
NPN transistor UTC 2SC3647G-R-AB3-R optimized for high voltage switching in small hybrid IC packages
Product Overview The UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 is an NPN silicon transistor designed for high-voltage switching applications. It features high breakdown voltage, large current capacity, and fast switching times, making it suitable for high-density, small-sized hybrid ICs. Product Attributes Brand: UNISONIC TECHNOLOGIES CO.,LTD Model: 2SC3647 Material: Silicon Package: SOT-89 Technical Specifications Parameter Symbol Rating Unit Test Conditions Collector to Base
