TOSHIBA MT3S111TU LF Transistor Silicon Germanium NPN for VHF UHF Low Noise Low Distortion Amplifier
Key Attributes
Model Number:
MT3S111TU,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
0.6V
Current - Collector Cutoff:
100nA
DC Current Gain:
400@30mA,5V
Transition Frequency(fT):
10GHz
Type:
NPN
Pd - Power Dissipation:
800mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
6V
Mfr. Part #:
MT3S111TU,LF
Package:
UFM
Product Description
Product Overview
The TOSHIBA MT3S111TU is a Silicon-Germanium NPN Epitaxial Planar Type transistor designed for VHF-UHF low-noise and low-distortion amplifier applications. It offers a typical low-noise figure of 0.85 dB at 1 GHz and a typical insertion gain of 12.5 dB at 1 GHz, making it suitable for high-frequency amplification.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon-Germanium NPN Epitaxial Planar Type Transistor
- Application: VHF-UHF Low-Noise, Low-Distortion Amplifier
- Origin: Japan (implied by TOSHIBA and Japanese characters in package diagram)
- Weight: 6.6 mg (typ.)
- Package: UFM (JEDEC - JEITA - TOSHIBA 2-2U1B)
- Marking: MT3S111TU
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Collector-emitter voltage | VCES | 13 | V | |||
| Collector-emitter voltage | VCEO | 6 | V | |||
| Emitter-base voltage | VEBO | 0.6 | V | |||
| Collector-current | IC | 100 | mA | |||
| Base-current | IB | 10 | mA | |||
| Collector power dissipation | PC | (Note 1) | 800 | mW | ||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature range | Tstg | 55 | 150 | C | ||
| Microwave Characteristics (Ta = 25C) | ||||||
| Transition frequency | fT | VCE=5 V, IC=30 mA | 8 | 10 | GHz | |
| Insertion gain | |S21e|(1) | VCE=5 V, IC=30 mA, f=500 MHz | 18 | dB | ||
| Insertion gain | |S21e|(2) | VCE=5 V, IC=30 mA, f=1 GHz | 10.5 | 12.5 | dB | |
| Noise figure | NF(1) | VCE=5 V, IC=30 mA, f=500 MHz | 0.6 | dB | ||
| Noise figure | NF(2) | VCE=5 V, IC=30 mA, f=1 GHz | 0.85 | 1.15 | dB | |
| 3rd order intermodulation distortion output intercept point | OIP3 | VCE=5 V, IC=30 mA, f=500 MHz, f=1 MHz | 32 | dBmW | ||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector cut-off current | ICBO | VCB=5 V, IE=0 A | 0.1 | A | ||
| DC current gain | hFE | VCE=5 V, IC=30 mA | 200 | 400 | ||
| Output capacitance | Cob | VCB=5 V, IE=0 A, f=1 MHz | 1.45 | pF | ||
| Reverse transfer capacitance | Cre | VCB=5 V, IE=0 A, f=1 MHz (Note 2) | 0.9 | 1.2 | pF | |
2410121814_TOSHIBA-MT3S111TU-LF_C5174755.pdf
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