Bias Resistor Built in Silicon NPN Transistor TOSHIBA RN1303 TE85L F for Inverter and Driver Circuits

Key Attributes
Model Number: RN1303(TE85L,F)
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
10V
Transition Frequency(fT):
250MHz
Type:
NPN
Vce Saturation(VCE(sat)):
300mV@5mA,0.25mA
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN1303(TE85L,F)
Package:
SOT-323
Product Description

Product Overview

The RN1301 to RN1306 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. Their integrated bias resistor simplifies circuit design, reduces component count, and decreases system size and assembly time. They are AEC-Q101 qualified and complementary to the RN2301 to RN2306 series.

Product Attributes

  • Brand: Toshiba
  • Type: Silicon NPN Epitaxial Type (PCT Process)
  • Feature: Bias Resistor built-in Transistor
  • Certifications: AEC-Q101 qualified
  • Complementary to: RN2301 to RN2306
  • Start of commercial production: 1987-09

Technical Specifications

Part No.Bias Resistor R1 (k)Bias Resistor R2 (k)VCBO (V)VCEO (V)VEBO (V)IC (mA)PC (mW)Tj (C)Tstg (C)ICBO (nA)ICEO (A)IEBO (A)hFEVCE(sat) (V)VI(ON) (V)VI(OFF) (V)fT (MHz)Cob (pF)R1 (k)R1/R2
RN13014.74.75050105100150-55 to 1501005001.52300.821.10.525064.71.0
RN130210105050105100150-55 to 1501005001.52500.381.20.52506101.0
RN130322225050105100150-55 to 1501005001.52700.171.30.52506221.0
RN130447475050105100150-55 to 1501005001.52800.0821.50.52506471.0
RN13052.2475050105100150-55 to 1501005001.52800.0780.60.82506.112.20.0468
RN13064.7475050105100150-55 to 1501005001.52800.0740.70.82506.114.70.09

2410121959_TOSHIBA-RN1303-TE85L-F_C7421321.pdf

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