silicon carbide fet onsemi UF4C120070K4S 1200 volt to 247 4l package suitable for pv inverters and power factor correction

Product Overview

The UF4C120070K4S is a 1200 V, 72 m SiC FET designed for high-performance power applications. It utilizes a unique cascode configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate-drive characteristics. This makes it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The device offers ultra-low gate charge, exceptional reverse recovery, and is ideal for switching inductive loads. It is available in a TO-247-4L package for faster switching and cleaner gate waveforms.

Key Applications:

• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating

Product Attributes

• Brand: onsemi
• Material: Silicon Carbide (SiC)
• Package: TO-247-4L
• Certifications: Pb-Free, Halogen Free, RoHS Compliant

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Unit
Drain-source Breakdown Voltage	BVDS	VGS = 0 V, ID = 1 mA	1200	V
Total Drain Leakage Current	IDSS	VDS = 1200 V, VGS = 0 V, TJ = 25 C	0.4	A
Total Drain Leakage Current	IDSS	VDS = 1200 V, VGS = 0 V, TJ = 175C	10	A
Total Gate Leakage Current	IGSS	VDS = 0 V, TJ = 25 C, VGS = -20 V / +20 V	6 / 20	nA
Drain-source On-resistance	RDS(on)	VGS = 12 V, ID = 20 A, TJ = 25C	72 (typ)	m
Drain-source On-resistance	RDS(on)	VGS = 12 V, ID = 20 A, TJ = 125C	140 (typ)	m
Drain-source On-resistance	RDS(on)	VGS = 12 V, ID = 20 A, TJ = 175C	197 (typ)	m
Gate Threshold Voltage	VG(th)	VDS = 5 V, ID = 10 mA	4.8 (typ)	V
Diode Continuous Forward Current	IS	TC = 25 C	27.5	A
Forward Voltage	VFSD	VGS = 0 V, IS = 10 A, TJ = 25 C	1.43 (typ)	V
Reverse Recovery Charge	Qrr	VDS = 800 V, IS = 20 A, VGS = 0 V, RG = 20 , di/dt = 1600 A/s, TJ = 25 C	119	nC
Input Capacitance	Ciss	VDS = 800 V, VGS = 0 V, f = 100 kHz	1370 (typ)	pF
Output Capacitance	Coss	VDS = 800 V, VGS = 0 V, f = 100 kHz	35 (typ)	pF
Reverse Transfer Capacitance	Crss	VDS = 800 V, VGS = 0 V, f = 100 kHz	2 (typ)	pF
Total Gate Charge	QG	VDS = 800 V, ID = 20 A, VGS = 0 V to 15 V	37.8 (typ)	nC
On-resistance	RDS(on)	72 m (typ)	72	m
Operating Temperature		max	175 C	C
ESD Protected			HBM Class 2 and CDM Class C3

2509091403_onsemi-UF4C120070K4S_C45082723.pdf