JFETs

quality MICROCHIP MX2N5115UBTR P Channel J FET with Low Gate Source Breakdown Voltage and High Drain Current factory

MICROCHIP MX2N5115UBTR P Channel J FET with Low Gate Source Breakdown Voltage and High Drain Current

Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is RoHS compliant in commercial grade versions. Screening in reference to MIL-PRF-19500 is available...

quality RoHS Compliant P Channel J FET MICROCHIP MQ2N5114UB Low Profile Surface Mount Package for Commercial factory

RoHS Compliant P Channel J FET MICROCHIP MQ2N5114UB Low Profile Surface Mount Package for Commercial

Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is RoHS compliant in its commercial grade versions. Screening in reference to MIL-PRF-19500 is available...

quality Surface mount MICROCHIP MQ2N5115UB TR P CHANNEL J FET with ceramic package and gold plated terminals factory

Surface mount MICROCHIP MQ2N5115UB TR P CHANNEL J FET with ceramic package and gold plated terminals

Product DescriptionThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is a surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. Screening in reference to ...

quality MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening factory

MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening

Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is a surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. RoHS compliant versions are available for ...

quality Surface mount P channel J FET MICROCHIP MX2N5115UB designed for high reliability voltage regulation factory

Surface mount P channel J FET MICROCHIP MX2N5115UB designed for high reliability voltage regulation

Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is suitable for various voltage regulation applications. RoHS compliant versions are available for commercial grades.Product ...

quality Low noise n channel jfet MICROCHIP 2N4393 with cutoff voltage under 3 volts and gate leakage below 50 picoamps factory

Low noise n channel jfet MICROCHIP 2N4393 with cutoff voltage under 3 volts and gate leakage below 50 picoamps

Product OverviewThe InterFET 2N4391, 2N4392, and 2N4393 are N-Channel JFETs designed for switch, chopper, and commutator applications. They feature a low noise characteristic of 1.2 nV/Hz typical, fast switching speeds, and low cutoff voltages, with the 2N4393 specifically offering a cutoff voltage ...

quality MIL PRF 19500 screened MICROCHIP MQ2N5115UB low profile P CHANNEL J FET with RoHS compliant options factory

MIL PRF 19500 screened MICROCHIP MQ2N5115UB low profile P CHANNEL J FET with RoHS compliant options

Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is also available in a TO-18 package. RoHS compliant versions are available for commercial grade applications.Product ...

quality Power MOS Transistor Chip Infineon IPC300N20N3X7SA1 designed for industrial multimarket applications factory

Power MOS Transistor Chip Infineon IPC300N20N3X7SA1 designed for industrial multimarket applications

Product Overview The OptiMOS3 Power MOS Transistor Chip IPC300N20N3 is an N-channel enhancement mode bare die designed for industrial and multimarket applications. It features a drain-source breakdown voltage of 200V and a typical on-resistance of 9.2 m. This bare die is suitable for applications ...

quality High Voltage Silicon Carbide JFET Transistor Infineon IJW120R070T1FKSA1 for Power Management Systems factory

High Voltage Silicon Carbide JFET Transistor Infineon IJW120R070T1FKSA1 for Power Management Systems

Product Overview The Infineon CoolSiC IJW120R070T1 is a 1200 V Silicon Carbide (SiC) JFET Power Transistor designed for high-efficiency power management applications. Leveraging the superior material properties of silicon carbide with a normally-on JFET concept, this transistor offers ultra-fast ...

quality CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified factory

CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified

Product Overview The CoolMOS C6 600V Power Transistor, specifically the IPx60R380C6 model, offers advanced performance for power management applications. It is designed for high efficiency and reliability, featuring a robust construction that is Pb-free and Halogen-free. This transistor is fully ...

quality N channel MOSFET Infineon IPU039N03LGXK optimized for power switching and electronic circuit control factory

N channel MOSFET Infineon IPU039N03LGXK optimized for power switching and electronic circuit control

2410311152_Infineon-IPU039N03LGXK_C22335811.pdf

quality Silicon N Channel JFET Central 2N5486 TO 92 Package Suitable for RF Mixer Amplifier Applications factory

Silicon N Channel JFET Central 2N5486 TO 92 Package Suitable for RF Mixer Amplifier Applications

2N5484, 2N5485, 2N5486 Silicon N-Channel JFET The CENTRAL SEMICONDUCTOR 2N5484, 2N5485, and 2N5486 are silicon N-Channel JFETs designed for RF amplifier and mixer applications. These devices are suitable for operation in the VHF/UHF frequency range. Product Attributes Brand: CENTRAL SEMICONDUCTOR ...

quality Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and Low VF Schottky Diode factory

Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and Low VF Schottky Diode

Product Overview The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module featuring a P-Channel enhancement-mode MOSFET and a low VF Schottky diode in a space-saving SOT-563 surface mount package. This device is engineered for general-purpose small signal applications prioritizing compact size ...

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