JFETs
MICROCHIP MX2N5115UBTR P Channel J FET with Low Gate Source Breakdown Voltage and High Drain Current
Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is RoHS compliant in commercial grade versions. Screening in reference to MIL-PRF-19500 is available.Product AttributesBrand: Microsemi CorporationPackage: UB Package (Surface Mount), TO-18 package (Leaded)Material: Ceramic case, Gold Plating over Nickel underplate terminals (RoHS
RoHS Compliant P Channel J FET MICROCHIP MQ2N5114UB Low Profile Surface Mount Package for Commercial
Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is RoHS compliant in its commercial grade versions. Screening in reference to MIL-PRF-19500 is available.Product AttributesBrand: MicrosemiPackage: UB (Surface Mount), TO-18 (Leaded)Material: Ceramic package with Gold Plating over Nickel underplate (terminals)Certifications: RoHS
Surface mount MICROCHIP MQ2N5115UB TR P CHANNEL J FET with ceramic package and gold plated terminals
Product DescriptionThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is a surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. Screening in reference to MIL-PRF-19500 is available. RoHS compliant versions are available for commercial grade only. Applications benefit from the low-profile UB package and lightweight design.Product
MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening
Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is a surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. RoHS compliant versions are available for commercial grade applications.Product AttributesBrand: Microsemi CorporationPackage: UB Package (Surface Mount), TO-18 (Leaded)Material: Ceramic case with Gold Plating over Nickel
Surface mount P channel J FET MICROCHIP MX2N5115UB designed for high reliability voltage regulation
Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is suitable for various voltage regulation applications. RoHS compliant versions are available for commercial grades.Product AttributesBrand: Microsemi CorporationPackage: UB Package (Surface Mount), TO-18 Package (Leaded)Certifications: Screening in reference to MIL-PRF-19500 available, RoHS compliant
Low noise n channel jfet MICROCHIP 2N4393 with cutoff voltage under 3 volts and gate leakage below 50 picoamps
Product OverviewThe InterFET 2N4391, 2N4392, and 2N4393 are N-Channel JFETs designed for switch, chopper, and commutator applications. They feature a low noise characteristic of 1.2 nV/Hz typical, fast switching speeds, and low cutoff voltages, with the 2N4393 specifically offering a cutoff voltage below 3.0V, making it ideal for low-level power supplies. These devices are RoHS compliant and available in SMT, Through-Hole (TO-18, TO-92), and Bare Die package options. Gate
MIL PRF 19500 screened MICROCHIP MQ2N5115UB low profile P CHANNEL J FET with RoHS compliant options
Product OverviewThis low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is also available in a TO-18 package. RoHS compliant versions are available for commercial grade applications.Product AttributesBrand: Microsemi CorporationPackage: UB Package (Surface Mount), TO-18 (Leaded)Material: Ceramic package, Gold Plating over Nickel underplate terminals (RoHS compliant Matte/Tin
Power MOS Transistor Chip Infineon IPC300N20N3X7SA1 designed for industrial multimarket applications
Product Overview The OptiMOS3 Power MOS Transistor Chip IPC300N20N3 is an N-channel enhancement mode bare die designed for industrial and multimarket applications. It features a drain-source breakdown voltage of 200V and a typical on-resistance of 9.2 m. This bare die is suitable for applications requiring high performance and reliability, with options for die bonding via soldering or gluing. It is manufactured with advanced passivation and metallization systems for robust
High Voltage Silicon Carbide JFET Transistor Infineon IJW120R070T1FKSA1 for Power Management Systems
Product Overview The Infineon CoolSiC IJW120R070T1 is a 1200 V Silicon Carbide (SiC) JFET Power Transistor designed for high-efficiency power management applications. Leveraging the superior material properties of silicon carbide with a normally-on JFET concept, this transistor offers ultra-fast switching, low intrinsic capacitance, and low gate charge, enabling higher system efficiency, increased power density, and reduced cooling requirements. Its robust design and high
CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified
Product Overview The CoolMOS C6 600V Power Transistor, specifically the IPx60R380C6 model, offers advanced performance for power management applications. It is designed for high efficiency and reliability, featuring a robust construction that is Pb-free and Halogen-free. This transistor is fully qualified according to JEDEC standards for industrial applications, making it suitable for a wide range of demanding use cases. Product Attributes Brand: Infineon Product Line:
N channel MOSFET Infineon IPU039N03LGXK optimized for power switching and electronic circuit control
2410311152_Infineon-IPU039N03LGXK_C22335811.pdf
Silicon N Channel JFET Central 2N5486 TO 92 Package Suitable for RF Mixer Amplifier Applications
2N5484, 2N5485, 2N5486 Silicon N-Channel JFET The CENTRAL SEMICONDUCTOR 2N5484, 2N5485, and 2N5486 are silicon N-Channel JFETs designed for RF amplifier and mixer applications. These devices are suitable for operation in the VHF/UHF frequency range. Product Attributes Brand: CENTRAL SEMICONDUCTOR Material: Silicon Channel Type: N-Channel JFET Package Type: TO-92 Marking: FULL PART NUMBER Technical Specifications Symbol Test Conditions 2N5484 (MIN) 2N5484 (MAX) 2N5485 (MIN)
Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and Low VF Schottky Diode
Product Overview The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module featuring a P-Channel enhancement-mode MOSFET and a low VF Schottky diode in a space-saving SOT-563 surface mount package. This device is engineered for general-purpose small signal applications prioritizing compact size and operational efficiency. Key applications include DC-DC converters and battery-powered portable equipment. It offers a low rDS(on) transistor with a maximum of 3.0 @ VGS=5.0V
