MIL PRF 19500 screened MICROCHIP MQ2N5115UB low profile P CHANNEL J FET with RoHS compliant options
Key Attributes
Model Number:
MQ2N5115UB
Product Custom Attributes
Ciss-Input Capacitance:
25pF@15V
Operating Temperature:
-65℃~+200℃@(Tj)
Pd - Power Dissipation:
500mW
FET Type:
-
Drain Current (Idss):
15mA@15V
RDS(on):
100Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
3V@1nA
Mfr. Part #:
MQ2N5115UB
Package:
SMD-3P
Product Description
Product Overview
This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is also available in a TO-18 package. RoHS compliant versions are available for commercial grade applications.
Product Attributes
- Brand: Microsemi Corporation
- Package: UB Package (Surface Mount), TO-18 (Leaded)
- Material: Ceramic package, Gold Plating over Nickel underplate terminals (RoHS compliant Matte/Tin available on commercial grade only)
- Certifications: Screening in reference to MIL-PRF-19500 available, RoHS compliant versions available (commercial grade only)
Technical Specifications
| Part Number | Junction and Storage Temperature | Gate-Source Voltage | Drain-Source Voltage | Drain-Gate Voltage | Gate Current | Steady-State Power Dissipation @ TA = +25C | Gate-Source Breakdown Voltage | Drain-Source "On" State Voltage (VGS=0, ID=-15mA) | Gate Reverse Current (VDS=0, VGS=20V) | Drain Current Cutoff (VGS=12V, VDS=-15V) | Zero Gate Voltage Drain Current (VGS=0, VDS=-18V) | Gate-Source Cutoff (VDS=-15, ID=-1.0nA) | Small-Signal Drain-Source "On" State Resistance (VGS=0, ID=-1.0mA) | Small-Signal Drain-Source "On" State Resistance (VGS=0, ID=0; f=1kHz) | Small-Signal Reverse Transfer Capacitance (VGS=12V, VDS=0) | Small-Signal Input Capacitance (VGS=0, VDS=-15V, f=1MHz) | Turn-On Delay Time | Rise Time | Turn-Off Delay Time |
| 2N5114UB | -65 to +200 C | 30 V | 30 V | 30 V | 50 mA | 0.500 W | 30 V | -1.3 V | 500 pA | -500 pA | -30 mA | 5.0 V | 75 | 75 | 7.0 pF | 25 pF | 6 s | 10 s | 6 s |
| 2N5115UB | -65 to +200 C | 30 V | 30 V | 30 V | 50 mA | 0.500 W | 30 V | -0.8 V | 500 pA | -500 pA | -15 mA | 3.0 V | 100 | 100 | 7.0 pF | 25 pF | 10 s | 20 s | 8 s |
| 2N5116UB | -65 to +200 C | 30 V | 30 V | 30 V | 50 mA | 0.500 W | 30 V | -0.6 V | 500 pA | -500 pA | -5.0 mA | 1.0 V | 175 | 175 | 7.0 pF | 27 pF | 25 s | 35 s | 20 s |
2410311654_MICROCHIP-MQ2N5115UB_C17362611.pdf
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