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quality High Voltage Silicon Carbide JFET Transistor Infineon IJW120R070T1FKSA1 for Power Management Systems factory
quality High Voltage Silicon Carbide JFET Transistor Infineon IJW120R070T1FKSA1 for Power Management Systems factory

High Voltage Silicon Carbide JFET Transistor Infineon IJW120R070T1FKSA1 for Power Management Systems

Key Attributes
Model Number: IJW120R070T1FKSA1
Product Custom Attributes
Ciss-Input Capacitance:
1.6nF@800V
FET Type:
1 N-channel
Operating Temperature:
-55℃~+175℃
Pd - Power Dissipation:
238W
Mfr. Part #:
IJW120R070T1FKSA1
Product Description

Product Overview

The Infineon CoolSiC IJW120R070T1 is a 1200 V Silicon Carbide (SiC) JFET Power Transistor designed for high-efficiency power management applications. Leveraging the superior material properties of silicon carbide with a normally-on JFET concept, this transistor offers ultra-fast switching, low intrinsic capacitance, and low gate charge, enabling higher system efficiency, increased power density, and reduced cooling requirements. Its robust design and high operating temperature capability (up to 175 C) contribute to enhanced system reliability. Ideal for solar inverters, high voltage DC/DC or AC/DC conversion, and bidirectional inverters, it is compliant with climate class IEC 60721-3-4 (4K4H).

Product Attributes

  • Brand: Infineon CoolSiC
  • Material: Silicon Carbide (SiC)
  • Technology: JFET (Junction Field Effect Transistor)
  • Certifications: Compliant for applications according to climate class IEC 60721-3-4 (4K4H)

Technical Specifications

Parameter Symbol Value Unit Note/Test Condition
Drain Source Voltage VDS 1200 V
Drain Source On-State Resistance (max) RDS(on) max 70 m VGS= 0 V; TC= 25 C
Gate Charge (typ) QG, typ 92 nC
Pulsed Current, Drain Source (max) ID, pulse 114 A VGS= 0 V; TC= 25 C
Stored Energy in Coss @ 800 V (typ) Eoss @ 800 V 38 J
Maximum Operating Temperature Tj, max 175 C
Type / Ordering Code IJW120R070T1
Package PG-TO247-3
Marking 120R070T1
Breakdown voltage, drain source V(BR)DSS 1200 V VGS= -19.5 V; IDS= 1 mA; TC= -50 C
Gate threshold voltage (typ) VGS(th) -12.3 to -13.9 V IDS= 14 A; VDS= 40 V; Tj= 100 C (bin dependent)
Drain- source leakage current (typ) IDSS 6.6 A VDS= 1200 V; VGS= -19.5 V; TC= 100 C
Drain- source on- state resistance (typ) RDS(on) 0.055 VGS= 0 V; IDS=12.5 A; TC= 25 C
Input capacitance (typ) Ciss 1600 pF VGS= -19.5 V; VDS= 800 V; f= 1 MHz
Output capacitance (typ) Coss 102 pF VGS= -19.5 V; VDS= 800 V; f= 1 MHz
Turn- on delay time (typ) td(on) 51 ns VDS= 800 V; VGS= -19.5 V/ 0 V; ID= 26 A; TC= 25 C; RG(on),tot= 2
Gate charge, total (typ) QG 92 nC
Diode forward voltage (typ) VSD 8 V ISD = 25 A; VGS= -19.5 V; TC = 100 C
Reverse recovery time (typ) trr 14 ns ISD = 25 A, VDS = 800 V, RG= 0 , Tj = 25 C
Reverse recovery charge (typ) Qrr 120 nC

2411280037_Infineon-IJW120R070T1FKSA1_C3753053.pdf

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