Surface mount P channel J FET MICROCHIP MX2N5115UB designed for high reliability voltage regulation
Key Attributes
Model Number:
MX2N5115UB
Product Custom Attributes
Ciss-Input Capacitance:
25pF@15V
Operating Temperature:
-65℃~+200℃@(Tj)
Pd - Power Dissipation:
500mW
FET Type:
-
Drain Current (Idss):
15mA@15V
RDS(on):
100Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
3V@1nA
Mfr. Part #:
MX2N5115UB
Package:
SMD-3P
Product Description
Product Overview
This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is suitable for various voltage regulation applications. RoHS compliant versions are available for commercial grades.
Product Attributes
- Brand: Microsemi Corporation
- Package: UB Package (Surface Mount), TO-18 Package (Leaded)
- Certifications: Screening in reference to MIL-PRF-19500 available, RoHS compliant versions available (commercial grade only)
- Material: Ceramic package, Gold Plating over Nickel underplate (Terminals)
- Marking: Part number, date code, manufacturers ID
- Tape & Reel option: Standard per EIA-418D
- Weight: < 0.04 Grams
Technical Specifications
| Model | Gate-Source Breakdown Voltage (V(BR)GSS) | Drain-Source "On" State Voltage (VDS(on)) @ ID = -15 mA | Drain-Source "On" State Voltage (VDS(on)) @ ID = -7.0 mA | Drain-Source "On" State Voltage (VDS(on)) @ ID = -3.0 mA | Gate Reverse Current (IGSS) | Drain Current Cutoff (ID(off)) | Zero Gate Voltage Drain Current (IDSS) @ VDS = -18V | Zero Gate Voltage Drain Current (IDSS) @ VDS = -15V | Gate-Source Cutoff (VGS(off)) @ ID = -1.0 nA | Small-Signal Drain-Source "On" State Resistance (rds(on)1) | Small-Signal Drain-Source "On" State Resistance (rds(on)2) | Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance (Crss) | Small-Signal, Common-Source Short-Circuit Input Capacitance (Ciss) | Turn-On Delay Time (Td(on)) | Rise Time (tr) | Turn-Off Delay Time (Td(off)) |
| 2N5114UB | 30 V | -1.3 V | - | - | 500 pA | -500 pA | -30 mA | -90 mA | 5.0 V | 75 | 75 | 7.0 pF | 25 pF | 6 s | 10 s | 6 s |
| 2N5115UB | 30 V | - | -0.8 V | - | 500 pA | -500 pA | -15 mA | -60 mA | 3.0 V | 100 | 100 | 7.0 pF | 25 pF | 10 s | 20 s | 8 s |
| 2N5116UB | 30 V | - | - | -0.6 V | 500 pA | -500 pA | -5.0 mA | -25 mA | 1.0 V | 175 | 175 | 7.0 pF | 27 pF | 25 s | 35 s | 20 s |
2410311740_MICROCHIP-MX2N5115UB_C17547760.pdf
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