Low noise n channel jfet MICROCHIP 2N4393 with cutoff voltage under 3 volts and gate leakage below 50 picoamps
Key Attributes
Model Number:
2N4393
Product Custom Attributes
Ciss-Input Capacitance:
14pF@20V
Operating Temperature:
-55℃~+125℃
Pd - Power Dissipation:
1.8W
FET Type:
1 N-channel
Drain Current (Idss):
-
RDS(on):
100Ω
Gate-Source Breakdown Voltage (Vgss):
40V
Gate-Source Cutoff Voltage (VGS(off)):
500mV@1nA
Mfr. Part #:
2N4393
Package:
TO-18
Product Description
Product Overview
The InterFET 2N4391, 2N4392, and 2N4393 are N-Channel JFETs designed for switch, chopper, and commutator applications. They feature a low noise characteristic of 1.2 nV/Hz typical, fast switching speeds, and low cutoff voltages, with the 2N4393 specifically offering a cutoff voltage below 3.0V, making it ideal for low-level power supplies. These devices are RoHS compliant and available in SMT, Through-Hole (TO-18, TO-92), and Bare Die package options. Gate leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications.
Product Attributes
- Brand: InterFET
- Certifications: RoHS Compliant
Technical Specifications
| Parameters | 2N4391 | 2N4392 | 2N4393 | Unit |
| Features | ||||
| Low Noise | 1.2 nV/Hz Typical | nV/Hz | ||
| Low Cutoff Voltage | < 3.0V | V | ||
| Gate Leakage | < 50pA Typical @ Room Temp | pA | ||
| Electrical Characteristics (Maximum Ratings @ TA = 25C, Unless otherwise specified) | ||||
| VRGS Reverse Gate Source and Gate Drain Voltage | -40 | V | ||
| IFG Continuous Forward Gate Current | 50 | mA | ||
| PD Continuous Device Power Dissipation | 1800 | mW | ||
| TJ Operating Junction Temperature | -55 to 125 | C | ||
| Static Characteristics (@ TA = 25C, Unless otherwise specified) | ||||
| V(BR)GSS Gate to Source Breakdown Voltage | -40 | -40 | -40 | V |
| IGSS Gate to Source Reverse Current | -100 to -200 (25C) -100 to -200 (150C) | -100 to -200 (25C) -100 to -200 (150C) | -100 to -200 (25C) -100 to -200 (150C) | pA / nA |
| VGS(OFF) Gate to Source Cutoff Voltage | -4 to -10 | -2 to -5 | -0.5 to -3 | V |
| IDSS Drain to Source Saturation Current | 50 to 150 | 25 to 75 | 5 to 30 | mA |
| RDS(ON) Static Drain to Source ON Resistance | 30 to 60 | 60 to 100 | 100 to 200 | |
| Dynamic Characteristics (@ TA = 25C, Unless otherwise specified) | ||||
| RDS(ON) Drain to Source ON Resistance | 30 to 60 | 60 to 100 | 100 to 200 | |
| Ciss Input Capacitance | 14 | 14 | 14 | pF |
| Crss Reverse Transfer Capacitance | 3.5 | pF | ||
| td Turn-On Delay Time | 15 | 15 | 15 | ns |
| tr Rise Time | 5 | 5 | 5 | ns |
| tD(OFF) Turn-Off Delay Time | 20 | 35 | 50 | ns |
| tf Fall Time | 15 | 20 | 30 | ns |
2411272200_MICROCHIP-2N4393_C17694074.pdf
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