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quality MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening factory
quality MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening factory

MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening

Key Attributes
Model Number: MV2N5116UB/TR
Product Custom Attributes
Ciss-Input Capacitance:
27pF@15V
Operating Temperature:
-65℃~+200℃@(Tj)
Pd - Power Dissipation:
500mW
Drain Current (Idss):
5mA@15V
FET Type:
-
RDS(on):
175Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
1V@1nA
Mfr. Part #:
MV2N5116UB/TR
Package:
SMD-3P
Product Description

Product Overview

This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is a surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. RoHS compliant versions are available for commercial grade applications.

Product Attributes

  • Brand: Microsemi Corporation
  • Package: UB Package (Surface Mount), TO-18 (Leaded)
  • Material: Ceramic case with Gold Plating over Nickel underplate terminals (RoHS compliant Matte/Tin available on commercial grade only)
  • Certifications: Screening in reference to MIL-PRF-19500 available
  • Compliance: RoHS compliant versions available (commercial grade only)

Technical Specifications

Part NumberGate-Source Breakdown Voltage (V(BR)GSS) @ IG = 1.0 ADrain-Source "On" State Voltage (VDS(on)) @ ID = -15 mA (VGS=0)Gate Reverse Current (IGSS) @ VDS = 0, VGS = 20 VDrain Current Cutoff (ID(off)) @ VGS = 12 V, VDS = -15 VZero Gate Voltage Drain Current (IDSS) @ VGS = 0, VDS = -18VGate-Source Cutoff (VGS(off)) @ VDS = -15, ID = -1.0 nASmall-Signal Drain-Source "On" State Resistance (rds(on)1) @ VGS = 0, ID = -1.0 mASmall-Signal Drain-Source "On" State Resistance (rds(on)2) @ VGS = 0, ID = 0; f = 1 kHzSmall-Signal Reverse Transfer Capacitance (Crss) @ f = 1.0 MHzSmall-Signal Input Capacitance (Ciss) @ f = 1.0 MHzTurn-On Delay Time (Td(on))Rise Time (tr)Turn-Off Delay Time (Td(off))
2N5114UB30 V-1.3 V500 pA-500 pA-30 mA5.0 V (10 V)75 75 7.0 pF25 pF6 s10 s6 s
2N5115UB30 V-0.8 V500 pA-500 pA-15 mA3.0 V (6.0 V)100 100 7.0 pF25 pF10 s20 s8 s
2N5116UB30 V-0.6 V500 pA-500 pA-5.0 mA (-90 mA)1.0 V (4.0 V)175 175 7.0 pF27 pF25 s35 s20 s

2410311727_MICROCHIP-MV2N5116UB-TR_C17533753.pdf

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