MICROCHIP MX2N5115UBTR P Channel J FET with Low Gate Source Breakdown Voltage and High Drain Current
Key Attributes
Model Number:
MX2N5115UB/TR
Product Custom Attributes
Ciss-Input Capacitance:
25pF@15V
Operating Temperature:
-65℃~+200℃@(Tj)
Pd - Power Dissipation:
500mW
FET Type:
-
Drain Current (Idss):
15mA@15V
RDS(on):
100Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
3V@1nA
Mfr. Part #:
MX2N5115UB/TR
Package:
SMD-3P
Product Description
Product Overview
This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is RoHS compliant in commercial grade versions. Screening in reference to MIL-PRF-19500 is available.
Product Attributes
- Brand: Microsemi Corporation
- Package: UB Package (Surface Mount), TO-18 package (Leaded)
- Material: Ceramic case, Gold Plating over Nickel underplate terminals (RoHS compliant Matte/Tin available on commercial grade only)
- Certifications: RoHS compliant versions available (commercial grade only), Screening in reference to MIL-PRF-19500 available
Technical Specifications
| Model | Gate-Source Breakdown Voltage (V(BR)GSS) | Drain-Source "On" State Voltage (VDS(on)) @ ID = -15 mA | Gate Reverse Current (IGSS) @ VDS = 0, VGS = 20 V | Drain Current Cutoff (ID(off)) @ VGS = 12 V | Zero Gate Voltage Drain Current (IDSS) @ VGS = 0, VDS = -15V | Gate-Source Cutoff (VGS(off)) @ VDS = -15, ID = -1.0 nA | Small-Signal Drain-Source "On" State Resistance (rds(on)1) @ VGS = 0, ID = -1.0 mA | Small-Signal Drain-Source "On" State Resistance (rds(on)2) @ VGS = 0, ID = 0; f = 1 kHz | Small-Signal Reverse Transfer Capacitance (Crss) | Small-Signal Input Capacitance (Ciss) | Turn-On Delay Time (Td(on)) | Rise Time (tr) | Turn-Off Delay Time (Td(off)) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N5114UB | 30 V | -1.3 V | 500 pA | -500 pA | -30 mA | 5.0 V | 75 | 75 | 7.0 pF | 25 pF | 6 s | 10 s | 6 s |
| 2N5115UB | 30 V | -0.8 V | 500 pA | -500 pA | -15 mA | 3.0 V | 100 | 100 | 7.0 pF | 25 pF | 10 s | 20 s | 8 s |
| 2N5116UB | 30 V | -0.6 V | 500 pA | -500 pA | -5.0 mA | 1.0 V | 175 | 175 | 7.0 pF | 27 pF | 25 s | 35 s | 20 s |
2410311740_MICROCHIP-MX2N5115UB-TR_C17561081.pdf
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