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quality CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified factory
quality CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified factory
quality CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified factory

CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified

Key Attributes
Model Number: IPP60R380C6XKSA1
Product Custom Attributes
Mfr. Part #:
IPP60R380C6XKSA1
Product Description

Product Overview

The CoolMOS C6 600V Power Transistor, specifically the IPx60R380C6 model, offers advanced performance for power management applications. It is designed for high efficiency and reliability, featuring a robust construction that is Pb-free and Halogen-free. This transistor is fully qualified according to JEDEC standards for industrial applications, making it suitable for a wide range of demanding use cases.

Product Attributes

  • Brand: Infineon
  • Product Line: CoolMOS C6
  • Technology: Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
  • Plating: Pb-free
  • Material: Halogen free
  • Qualification: Fully qualified according to JEDEC for Industrial Applications

Technical Specifications

Model Voltage Rating Description
IPx60R380C6 600V CoolMOS C6 Power Transistor

Technical Specifications

Part Number Package Description
IPB60R380C6 PG-TO263 CoolMOS C6 Power Transistor
IHW60R380C6 PG-TO247 CoolMOS C6 Power Transistor
IPI60R380C6 PG-TO220 FullPAK CoolMOS C6 Power Transistor
IPI60R380C6 PG-TO220 FullPAK CoolMOS C6 Power Transistor

Technical Specifications

Parameter Symbol Value Unit Condition
Drain-source voltage VDS 600 V
Continuous drain current ID 16.5 A TC = 25C
Pulsed drain current ID,pulse 50 A
Gate-source voltage VGS ±20 V
Continuous drain current ID 16.5 A TC = 25C
Continuous drain current ID 10.5 A TC = 100C
Pulsed drain current ID,pulse 50 A
Gate-source voltage VGS ±20 V
Avalanche energy, single pulse EAS 165 mJ ID = 16.5A, VDD = 50V
Avalanche current, repetitive IAR 16.5 A
Avalanche energy, repetitive EAR 165 mJ
Repetitive avalanche current IAR 16.5 A
Repetitive avalanche energy EAR 165 mJ
Drain-source on-resistance RDS(on) 0.38 Ω VGS = 10V, ID = 8.25A
Threshold voltage Vth 2.5 V ID = 1mA
Gate charge Qg 53 nC VGS = 10V
Input capacitance Ciss 1250 pF VGS = 0V, f = 1MHz
Output capacitance Coss 120 pF VGS = 0V, f = 1MHz
Reverse transfer capacitance Crss 15 pF VGS = 0V, f = 1MHz
Total gate charge Qg 53 nC VGS = 10V
Input capacitance Ciss 1250 pF VGS = 0V, f = 1MHz
Output capacitance Coss 120 pF VGS = 0V, f = 1MHz
Reverse transfer capacitance Crss 15 pF VGS = 0V, f = 1MHz
Maximum Junction Temperature Tj,max 150 C
Storage Temperature Tstg -55 to 150 C
Thermal Resistance, Junction-to-Case RthJC 0.6 K/W
Thermal Resistance, Junction-to-Ambient RthJA 62 K/W
ESD capability VESD 2 kV Human Body Model (HBM)
ESD capability VESD 200 V Charged Device Model (CDM)
Package Thermal Resistance RthJC 0.6 K/W
Package Thermal Resistance RthJA 62 K/W

Technical Specifications

Model Package Outline
IPB60R380C6 PG-TO263 TO-263
IHW60R380C6 PG-TO247 TO-247
IPI60R380C6 PG-TO220 FullPAK TO-220 FullPAK

Technical Specifications

Outline Dimension Value (mm)
PG-TO220 FullPAK A 15.85
A1 2.54
b 1.02
b1 2.54
b2 1.78
b3 1.15
b4 2.41
c 0.64
c2 0.89
D 15.67
D1 13.75
E 10.00
E1 7.50
e 2.54
e1 5.02
PG-TO220 FullPAK H 28.70
L 16.15
L1 10.65
P 3.50
Q 2.85
L3 1.27
L4 4.57
A2 2.54
c2 0.89
b2 1.78
b3 1.15
b4 2.41
c 0.64
D 15.67
D1 13.75
PG-TO220 FullPAK E 10.00
E1 7.50
e 2.54
e1 5.02
H 28.70
L 16.15
L1 10.65
P 3.50
Q 2.85
L3 1.27
L4 4.57
A2 2.54
c2 0.89
b2 1.78
b3 1.15
PG-TO220 FullPAK b4 2.41
c 0.64
D 15.67
D1 13.75
E 10.00
E1 7.50
e 2.54
e1 5.02
H 28.70
L 16.15
L1 10.65
P 3.50
Q 2.85
L3 1.27
L4 4.57

2410301807_Infineon-IPP60R380C6XKSA1_C21102538.pdf

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