TO247 3 packaged Silicon Carbide FET onsemi UF3C065080K3S ideal for replacing Si IGBTs and Si MOSFETs
Key Attributes
Model Number:
UF3C065080K3S
Product Custom Attributes
Mfr. Part #:
UF3C065080K3S
Package:
TO-247-3
Product Description
Product Overview
This Silicon Carbide (SiC) FET device utilizes a unique cascode configuration, integrating a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO247-3 package, this device offers ultra-low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads with recommended RC-snubbers and applications requiring standard gate drive.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Package: TO247-3
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Maximum Ratings | ||||
| Drain-source Voltage | VDS | 650 | V | |
| Gate-source Voltage | VGS | DC | -25 to +25 | V |
| Continuous Drain Current (Note 1) | ID | TC = 25 C | 31 | A |
| Continuous Drain Current (Note 1) | ID | TC = 100 C | 23 | A |
| Pulsed Drain Current (Note 2) | IDM | TC = 25 C | 65 | A |
| Single Pulsed Avalanche Energy (Note 3) | EAS | L= 15 mH, IAS = 2.1 A | 33 | mJ |
| Power Dissipation | Ptot | TC = 25 C | 190 | W |
| Maximum Junction Temperature | TJ,max | 175 | C | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | C | |
| Max. Lead Temperature for Soldering, 1/8 from Case for 5 Seconds | TL | 250 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Case | R JC | 0.61 - 0.79 | C/W | |
| Electrical Characteristics (TJ = +25 C unless otherwise specified) | ||||
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 650 | V |
| Total Drain Leakage Current | IDSS | VDS = 650 V, VGS = 0 V, TJ = 25 C | 6 - 100 | A |
| Total Drain Leakage Current | IDSS | VDS = 650 V, VGS = 0 V, TJ = 175 C | 40 | A |
| Total Gate Leakage Current | IGSS | VDS = 0 V, TJ = 25 C, VGS = -20 V / +20 V | 20 | A |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 25 C | 80 - 100 | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 125 C | 111 | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 175 C | 141 | m |
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4 - 6 | V |
| Gate Resistance | RG | f = 1 MHz, open drain | 4.5 | |
| Reverse Diode | ||||
| Diode Continuous Forward Current (Note 4) | IS | TC = 25 C | 31 | A |
| Diode Pulse Current (Note 5) | IS,pulse | TC = 25 C | 65 | A |
| Forward Voltage | VFSD | VGS = 0 V, IS = 10 A, TJ = 25 C | 1.5 - 2 | V |
| Forward Voltage | VFSD | VGS = 0 V, IS = 10 A, TJ = 175 C | 1.75 | V |
| Reverse Recovery Charge | Qrr | VDS = 400 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 ,di/dt = 2200 A/ s, TJ = 25 C | 119 | nC |
| Reverse Recovery Time | trr | VDS = 400 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2200 A/ s, TJ = 25 C | 16 | ns |
| Reverse Recovery Charge | Qrr | VDS = 400 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2200 A/ s, TJ = 150 C | 73 | nC |
| Reverse Recovery Time | trr | VDS = 400 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2200 A/ s, TJ = 150 C | 11 | ns |
| Dynamic Performance | ||||
| Input Capacitance | Ciss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 1500 | pF |
| Output Capacitance | Coss | 104 | pF | |
| Reverse Transfer Capacitance | Crss | 2.6 | pF | |
| Effective Output Capacitance, Energy Related | Coss(er) | VDS = 0 V to 400 V, VGS = 0 V | 77 | pF |
| Effective Output Capacitance, Time Related | Coss(tr) | VDS = 0 V to 400 V, VGS = 0 V | 176 | pF |
| COSS Stored Energy | Eoss | VDS = 400 V, VGS = 0 V | 6.2 | J |
| Total Gate Charge | QG | VDS = 400 V, ID = 20 A, VGS = -5 V to15 V | 51 | nC |
| Gate-drain Charge | QGD | 11 | ||
| Gate-source Charge | QGS | 19 | ||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 20 A, Gate Driver = -5 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 22 , Inductive Load, FWD: same device with VGS = -5 V and RG = 22 , RC snubber: RS = 5 , CS = 100 pF, TJ = 25 C | 25 | ns |
| Rise Time | tr | 14 | ns | |
| Turn-off Delay Time | td(off) | 54 | ns | |
| Fall Time | tf | 11 | ns | |
| Turn-on Energy Including RS Energy (Note 6) | EON | 182 | J | |
| Turn-off Energy Including RS Energy (Note 6) | EOFF | 24 | J | |
| Total Switching Energy Including RS Energy (Note 6) | ETOTAL | 206 | J | |
| Snubber RS Energy During Turn-on | ERS_ON | 0.6 | J | |
| Snubber RS Energy During Turn-off | ERS_OFF | 1.1 | J | |
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 20 A, Gate Driver = -5 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 22 , Inductive Load, FWD: same device with VGS = -5 V and RG = 22 , RC snubber: RS = 5 , CS = 100 pF, TJ = 150 C | 22 | ns |
| Rise Time | tr | 14 | ns | |
| Turn-off Delay Time | td(off) | 55 | ns | |
| Fall Time | tf | 12 | ns | |
| Turn-on Energy Including RS Energy (Note 6) | EON | 156 | J | |
| Turn-off Energy Including RS Energy (Note 6) | EOFF | 25 | J | |
| Total Switching Energy Including RS Energy (Note 6) | ETOTAL | 181 | J | |
| Snubber RS Energy During Turn-on | ERS_ON | 0.6 | J | |
| Snubber RS Energy During Turn-off | ERS_OFF | 1.2 | J | |
2511111607_onsemi-UF3C065080K3S_C45082712.pdf
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