High current capacity N channel MOSFET SANKEN 2SK3710 for power management and motor drive circuits

Key Attributes
Model Number: 2SK3710
Product Custom Attributes
Mfr. Part #:
2SK3710
Product Description

Product Overview

The SANKEN ELECTRIC 2SK3710 is a high-performance N-channel MOSFET designed for demanding applications. It features exceptionally low on-state resistance (5.0m at VGS=10V) and a built-in gate protection diode for enhanced reliability. This device is suitable for DC-DC converters and motor drive applications, offering efficient power management and robust operation.

Product Attributes

  • Brand: SANKEN ELECTRIC
  • Model: 2SK3710
  • Package: TO220S
  • Internal Equivalent Circuit: N-channel MOSFET with gate protection diode
  • Note: Not Recommended for New Designs

Technical Specifications

Characteristic Symbol Rating Unit Conditions
Drain to Source Voltage VDSS 60 V (ID=100uA)
Gate to Source Voltage VGSS 20 V
Continuous Drain Current ID 85 A (Tc=25C)
Pulsed Drain Current ID(pulse) 170 A *1
Maximum Power Dissipation PD 100 W (Tc=25C)
Single Pulse Avalanche Energy EAS 400 mJ *2
Maximum avalanche current IAS 25 A
Channel Temperature Tch 150 C
Storage Temperature Tstg -55 ~ +150 C
Maximum Drain to Source dv/dt 1 dv/dt 1 0.5 V/ns *2
Peak diode recovery dv/dt 2 dv/dt 2 3 V/ns *3
Peak diode recovery di/dt di/dt 100 A/s *3
Drain to Source Breakdown Voltage V(BR)DSS 60 V ID=100A, VGS=0V
Gate to Source Leakage Current IGSS 10 A VGS=15V
Drain to Source Leakage Current IDSS 100 A VDS=60V, VGS=0V
Gate Threshold Voltage VTH 2.0 ~ 4.0 V VDS=10V, ID=1mA
Forward Transconductance Re(yfs) 30 ~ 80 S VDS=10V, ID=35A
Static Drain to Source On-Resistance RDS(ON) 5.0 ~ 6.0 m ID=35A, VGS=10V
Input Capacitance Ciss 8400 pF VDS=10V, VGS=0V, f=1MHz
Output Capacitance Coss 1200 pF VDS=10V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss 930 pF VDS=10V, VGS=0V, f=1MHz
Turn-On Delay Time td(on) 160 ns ID=35A, VDD=20V, RG=22, RGS=50, RL=0.57, VGS=10V (See Fig.3)
Rise Time tr 170 ns ID=35A, VDD=20V, RG=22, RGS=50, RL=0.57, VGS=10V (See Fig.3)
Turn-Off Delay Time td(off) 430 ns ID=35A, VDD=20V, RG=22, RGS=50, RL=0.57, VGS=10V (See Fig.3)
Fall Time tf 185 ns ID=35A, VDD=20V, RG=22, RGS=50, RL=0.57, VGS=10V (See Fig.3)
Source-Drain Diode Forward Voltage VSD 0.9 ~ 1.5 V ISD=50A, VGS=0V
Source-Drain Diode Reverse Recovery Time trr 65 ns ISD=25A, di/dt=50A/s
Thermal Resistance Junction to Case Rth(ch-c) 1.25 C/W
Thermal Resistance Junction to Ambient Rth(ch-a) 62.5 C/W
Weight Approx. 1.4 g

*1 PW100sec. duty cycle1
*2 VDD=20V, L=1mH, IL=25A, unclamped, Rg=50See Fig.1
*3 ISD=25ASee Fig.2


2410311047_SANKEN-2SK3710_C21485801.pdf

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