SOT 23 packaged P Channel JFET transistor onsemi MMBFJ177LT1G offering Pb Free and RoHS compliant features
Key Attributes
Model Number:
MMBFJ177LT1G
Product Custom Attributes
Ciss-Input Capacitance:
11pF@10V
Operating Temperature:
-55℃~+150℃@(Tj)
Pd - Power Dissipation:
225mW
Drain Current (Idss):
1.5mA@15V
FET Type:
-
RDS(on):
300Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
800mV@10nA
Mfr. Part #:
MMBFJ177LT1G
Package:
SOT-23
Product Description
Product Overview
The MMBFJ177LT1G and SMMBFJ177LT1G are P-Channel depletion mode JFET chopper transistors designed for various applications. The 'S' prefix denotes suitability for automotive and other applications with unique site and control change requirements, offering AEC-Q101 qualification and PPAP capability. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: ON Semiconductor
- Certifications: AEC-Q101 Qualified (for 'S' prefix), PPAP Capable (for 'S' prefix)
- Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant
- Package: SOT-23 (TO-236)
Technical Specifications
| Part Number | VDG (Max) | VGS (Max) | IGSS (Max) | VGS(off) (V) | IDSS (Max) | rDS(on) (Max) | Ciss (Max) | Crss (Max) |
| MMBFJ177LT1G / SMMBFJ177LT1G | -25 Vdc | 25 Vdc | 1.0 nAdc | 0.8 - 2.5 | -20 mAdc | 300 | 11 pF | 5.5 pF |
2410010301_onsemi-MMBFJ177LT1G_C106763.pdf
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