Compact N Channel JFET onsemi 2SK3557 7 TB E for AM tuner RF amplification and low noise applications

Key Attributes
Model Number: 2SK3557-7-TB-E
Product Custom Attributes
Ciss-Input Capacitance:
35pF@5V
Drain Current (Idss):
32mA@5V
Pd - Power Dissipation:
200mW
FET Type:
1 N-channel
RDS(on):
-
Gate-Source Breakdown Voltage (Vgss):
15V
Gate-Source Cutoff Voltage (VGS(off)):
-
Mfr. Part #:
2SK3557-7-TB-E
Package:
CP-3
Product Description

Product Overview

The 2SK3557 is an N-Channel JFET designed for AM tuner RF amplification and low-noise amplifier applications. It features a large |yfs|, small Ciss, ultrasmall-sized package for compact designs, and an ultralow noise figure.

Product Attributes

  • Brand: onsemi
  • Origin: Semiconductor Components Industries, LLC
  • Package: CP (SC-59, TO-236, SOT-23, TO-236AB)
  • Minimum Packing Quantity: 3,000 pcs./reel
  • Packing Type: TL
  • Marking: IR LOT No., RANK LOT No., 2SK3557-6-TB-E, 2SK3557-7-TB-E
  • Certifications: Pb Free

Technical Specifications

ParameterSymbolConditionsRatingsUnit
Absolute Maximum Ratings
Drain-to-Source VoltageVDSX15V
Gate-to-Drain VoltageVGDS-15V
Gate CurrentIG10mA
Drain CurrentID50mA
Allowable Power DissipationPD200mW
Junction TemperatureTj150C
Storage TemperatureTstg-55 to +150C
Electrical Characteristics (Ta=25C)
Gate-to-Drain Breakdown VoltageV(BR)GDSIG=-10A, VDS=0V-15V
Gate Cutoff CurrentIGSSVGS=-10V, VDS=0V-1.0nA
Cutoff VoltageVGS(off)VDS=5V, ID=100A-0.3 to -1.5V
Drain CurrentIDSSVDS=5V, VGS=0V10* to 32*mA
Forward Transfer Admittance|yfs|VDS=5V, VGS=0V, f=1kHz24 to 35mS
Input CapacitanceCissVDS=5V, VGS=0V, f=1MHz10.0pF
Reverse Transfer CapacitanceCrssVDS=5V, VGS=0V, f=1MHz2.9pF
Noise FigureNFVDS=5V, Rg=1k, ID=1mA, f=1kHz1.0dB
*The 2SK3557 is classified by IDSS as follows:
Rank6IDSS10.0 to 20.0mA
Rank7IDSS16.0 to 32.0mA
Ordering Information
DevicePackageShipping memo
2SK3557-6-TB-ECP3,000pcs./reel
2SK3557-7-TB-ECP3,000pcs./reel

2410121817_onsemi-2SK3557-7-TB-E_C604972.pdf

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