Automotive grade P Channel depletion mode JFET onsemi MMBFJ175LT1G with AEC Q101 certification and RoHS compliance
Key Attributes
Model Number:
MMBFJ175LT1G
Product Custom Attributes
Ciss-Input Capacitance:
11pF@10V
Operating Temperature:
-55℃~+150℃@(Tj)
Pd - Power Dissipation:
225mW
Drain Current (Idss):
7mA@15V
FET Type:
-
RDS(on):
125Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
3V@10nA
Mfr. Part #:
MMBFJ175LT1G
Package:
SOT-23
Product Description
Product Overview
The MMBFJ175LT1 is a P-Channel, depletion-mode JFET chopper designed for automotive and other applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, featuring Pb-Free, Halogen Free/BFR Free, and RoHS compliance.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (dba ON Semiconductor)
- Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS Compliant
- Material: Pb-Free, Halogen Free/BFR Free
- Origin: USA/Canada (implied by support contact information)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes | |
| MAXIMUM RATINGS | |||||
| DrainGate Voltage | VDG | 25 | V | ||
| Reverse GateSource Voltage | VGS(r) | 25 | V | ||
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation FR5 Board | PD | 225 | mW | TA = 25C; Derate above 25C: 1.8 mW/C | |
| Thermal Resistance, JunctiontoAmbient | R JA | 556 | C/W | ||
| Junction and Storage Temperature | TJ, Tstg | 55 to +150 | C | ||
| OFF CHARACTERISTICS | |||||
| GateSource Breakdown Voltage | V(BR)GSS | 30 | VDS = 0, ID = 1.0 mA | ||
| Gate Reverse Current | IGSS | 1.0 | nA | VDS = 0 V, VGS = 20 V | |
| GateSource Cutoff Voltage | VGS(OFF) | 3.0 | 6.0 | V | VDS = 15, ID = 10 nA |
| ON CHARACTERISTICS | |||||
| Zero GateVoltage Drain Current | IDSS | 7.0 | 60 | mA | VGS = 0, VDS = 15 V (Note 2) |
| Drain Cutoff Current | ID(off) | 1.0 | nA | VDS = 15 V, VGS = 10 V | |
| Drain Source On Resistance | rDS(on) | 125 | ID = 500 A | ||
| Input Capacitance | Ciss | 11 | pF | VDS = 0, VGS = 10V, f = 1.0 MHz | |
| Reverse Transfer Capacitance | Crss | 5.5 | pF | ||
Notes:
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2410010302_onsemi-MMBFJ175LT1G_C133304.pdf
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