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quality voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure factory
quality voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure factory
quality voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure factory
quality voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure factory

voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure

Key Attributes
Model Number: TK20S06K3L(T6L1,NQ
Product Custom Attributes
Mfr. Part #:
TK20S06K3L(T6L1,NQ
Product Description

Toshiba MOSFET Product Guide 2009-9

Toshiba MOSFETs are designed to meet the demands of ultra-high-density applications, offering superior frequency and switching characteristics due to their trench structure and double-diffusion MOS (D-MOS) structure. These devices are voltage-controlled, requiring low drive power and enabling easy parallel connection. Key advantages include guaranteed avalanche capability, improved built-in diode function, high ruggedness, high-speed switching, low ON-resistance (RDS(ON)) for reduced power consumption, smaller package sizes, and low drive loss.

Product Attributes

  • Brand: Toshiba
  • Origin: Japan (implied by domain)

Technical Specifications

SeriesStructureKey FeaturesApplicationsVDSS Range
-MOSDouble-Diffusion MOS (D-MOS)High-withstand voltage, high-current devices, high-performance, low ON-resistance, low power loss.Switching power supplies, AC adapters, Motor driversNot specified
U-MOSTrench TypeHigher channel density, lower ON-resistance than other MOSFET structures. Ideal for synchronous rectification.Synchronous rectification on the secondary side of power supply circuits, Lithium-ion secondary battery protection circuits, Notebook PCs, Portable electronic devices, DC-DC converters40 V to 150 V
DTMOSSuper-Junction StructureRealizes high withstand voltage and ON-resistance lower than the conventional theoretical limit of silicon. Achieves low ON-resistance and low gate charge (Qg).Switching power supplies, AC adapters, Motor drivers, Solenoids and lamp drivers600 V, 650 V
High-Speed -MOS-MOSHigher switching speed than the well-proven -MOS Series. Available in high-speed switching and high-speed diode series.Inverters, Switching power supplies, Motor drivers, AC adapters450 V to 600 V
-MOSVII-MOSReduced capacitances due to optimized chip design, wider range of electrical characteristics.Switching power supplies, AC adapters, Motor drivers450 V to 650 V
TO-220SM(W)Trench technologyLow ON-resistance, high current-carrying capability. Low-voltage drive (VGS = 4 V) possible due to ultra-low ON-resistance.Lithium-ion secondary battery protection circuits, Notebook PCs, Portable electronic devices, DC-DC converters40 V to 150 V
SOP and TSON SeriesTrench technologyCompact and thin, small mounting area.Lithium-ion secondary battery protection circuits, Notebook PCs20 V to 250 V
LGA and STP SeriesTrench technologyUltra-small and thin package.Lithium-ion secondary battery protection circuits in various portable electronic devices20 V to 30 V
VS and PS SeriesNot specifiedVery compact and thin.Various electronic devices, Motor drivers, Switching power supplies12 V to 40 V
SSM SeriesNot specifiedVery compact and thin, low voltage drive. Available in a wide range of packages.Cell phones, Notebook PCs, Portable electronic devices, Small-signal switching12 V to 60 V

2411191413_TOSHIBA-TK20S06K3L-T6L1-NQ_C22180993.pdf

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