Silicon Carbide Cascode JFET onsemi UF3C120080K3S designed for switching in motor drives and power supplies
Key Attributes
Model Number:
UF3C120080K3S
Product Custom Attributes
Mfr. Part #:
UF3C120080K3S
Package:
TO-247-3
Product Description
UF3C120080K3S Silicon Carbide (SiC) Cascode JFET
The UF3C120080K3S is a Silicon Carbide (SiC) Cascode JFET designed for high-performance power applications. This device utilizes a unique cascode circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si super-junction devices. The UF3C120080K3S offers ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, especially when used with recommended RC-snubbers. Key advantages include very low switching losses and a low intrinsic capacitance. It is suitable for a wide range of applications including EV Charging, PV Inverters, Switch Mode Power Supplies, Power Factor Correction Modules, Motor Drives, and Induction Heating.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| MAXIMUM RATINGS | ||||
| Drain-source Voltage | VDS | 1200 | V | |
| Gate-source Voltage | VGS | DC | -25 to +25 | V |
| Continuous Drain Current (Note 1) | ID | TC = 25 C | 33 | A |
| Continuous Drain Current (Note 1) | ID | TC = 100 C | 24 | A |
| Pulsed Drain Current (Note 2) | IDM | TC = 25 C | 77 | A |
| Single Pulsed Avalanche Energy (Note 3) | EAS | L = 15 mH, IAS = 2.8 A | 58.5 | mJ |
| Power Dissipation | Ptot | TC = 25 C | 254.2 | W |
| Maximum Junction Temperature | TJ,max | 175 | C | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | C | |
| Max. Lead Temperature for Soldering, 1/8 from Case for 5 Seconds | TL | 250 | C | |
| THERMAL CHARACTERISTICS | ||||
| Thermal Resistance, Junction-to-Case | RJC | 0.45 - 0.59 | C/W | |
| ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) | ||||
| TYPICAL PERFORMANCE - STATIC | ||||
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 1200 | V |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 25 C | 10 | A |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 175C | 50 | A |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 25 C | 80 | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 125 C | 130 | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 175 C | 172 | m |
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4 - 6 | V |
| TYPICAL PERFORMANCE - REVERSE DIODE | ||||
| Diode Continuous Forward Current (Note 4) | IS | TC = 25 C | 33 | A |
| Diode Pulse Current (Note 5) | IS,pulse | TC = 25 C | 77 | A |
| Forward Voltage | VFSD | VGS = 0 V, IS = 10 A, TJ = 25 C | 1.5 - 2 | V |
| Forward Voltage | VFSD | VGS = 0 V, IS = 10 A, TJ = 175 C | 2 | V |
| Reverse Recovery Charge | Qrr | VDS = 800 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2300 A/s, TJ = 25 C | 212 | nC |
| Reverse Recovery Time | trr | VDS = 800 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2300 A/s, TJ = 25 C | 23 | ns |
| Reverse Recovery Charge | Qrr | VDS = 800 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2300 A/s, TJ = 150 C | 124 | nC |
| Reverse Recovery Time | trr | VDS = 800 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2300 A/s, TJ = 150 C | 13 | ns |
| TYPICAL PERFORMANCE - DYNAMIC | ||||
| Input Capacitance | Ciss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 1500 | pF |
| Output Capacitance | Coss | 100 | pF | |
| Reverse Transfer Capacitance | Crss | 2.1 | pF | |
| Effective Output Capacitance, Energy Related | Coss(er) | VDS = 0 V to 800 V, VGS = 0 V | 59 | pF |
| Effective Output Capacitance, Time Related | Coss(tr) | 136 | pF | |
| Stored Energy in Coss | Eoss | VDS = 800 V, VGS = 0 V | 19 | J |
| Total Gate Charge | QG | VDS = 800 V, ID = 20 A, VGS = -5 V to 15 V | 51 | nC |
| Turn-on Delay Time | td(on) | VDS = 800 V, ID = 20 A, TJ = 25 C | 26 | ns |
| Rise Time | tr | VDS = 800 V, ID = 20 A, TJ = 25 C | 17 | ns |
| Turn-off Delay Time | td(off) | VDS = 800 V, ID = 20 A, TJ = 25 C | 57 | ns |
| Fall Time | tf | VDS = 800 V, ID = 20 A, TJ = 25 C | 19 | ns |
| Turn-on Energy Including RS Energy | EON | VDS = 800 V, ID = 20 A, TJ = 25 C | 500 | J |
| Turn-off Energy Including RS Energy | EOFF | VDS = 800 V, ID = 20 A, TJ = 25 C | 85 | J |
| Total Switching Energy Including RS Energy | ETOTAL | VDS = 800 V, ID = 20 A, TJ = 25 C | 585 | J |
| Turn-on Delay Time | td(on) | VDS = 800 V, ID = 20 A, TJ = 150 C | 26 | ns |
| Rise Time | tr | VDS = 800 V, ID = 20 A, TJ = 150 C | 16 | ns |
| Turn-off Delay Time | td(off) | VDS = 800 V, ID = 20 A, TJ = 150 C | 58 | ns |
| Fall Time | tf | VDS = 800 V, ID = 20 A, TJ = 150 C | 19 | ns |
| Turn-on Energy Including RS Energy | EON | VDS = 800 V, ID = 20 A, TJ = 150 C | 482 | J |
| Turn-off Energy Including RS Energy | EOFF | VDS = 800 V, ID = 20 A, TJ = 150 C | 87 | J |
| Total Switching Energy Including RS Energy | ETOTAL | VDS = 800 V, ID = 20 A, TJ = 150 C | 569 | J |
2509301015_onsemi-UF3C120080K3S_C45082713.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
