RoHS compliant PNP transistor amsem BC807-40 with 500mA collector current and Green EMC certification
Key Attributes
Model Number:
BC807-40
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC807-40
Package:
SOT-23
Product Description
Product Overview
The BC807 is a PNP general-purpose amplifier transistor designed for surface mount applications. It offers a power dissipation capability of 300mW and a collector current of 500mA, with a wide operating and storage junction temperature range. This RoHS compliant and Green EMC device is suitable for various amplification tasks.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Origin: China
- Package: SOT-23
- Certifications: RoHS compliant / Green EMC
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Unit | BC807-16 | BC807-25 | BC807-40 |
| VCBO | Collector-Base Voltage | -50 | V | |||||
| VCEO | Collector-Emitter Voltage | -45 | V | |||||
| VEBO | Emitter-Base Voltage | -5 | V | |||||
| IC | Collector Current | -500 | mA | |||||
| PC | Collector Power Dissipation | (Ta=25) | 300 | mW | ||||
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W | |||||
| Tj | Junction Temperature | 150 | ||||||
| TSTG | Storage Temperature | -55 | +150 | |||||
| VCEO | Collector-Emitter Breakdown Voltage | IC=-10mA, IB=0 | -45 | V | ||||
| VCBO | Collector-Base Breakdown Voltage | IC=-10A, IE=0 | -50 | V | ||||
| VEBO | Emitter-Base Breakdown Voltage | IE=-10A, IC=0 | -5.0 | V | ||||
| ICBO | Collector Cutoff Current | VCB=-45V, IE=0V | -100 | nA | ||||
| ICEO | Collector Cutoff Current | VCE=-40V, IE=0V | -200 | nA | ||||
| IEBO | Collector Cutoff Current | VEB=-4V, VBE=0V | -100 | nA | ||||
| hFE(1) | DC Current Gain* | IC=-100mA,VCE=-1V | 100 | 250 | 100-250 | 160-400 | 250-600 | |
| hFE(1) | DC Current Gain* | IC=-100mA,VCE=-1V | 160 | 400 | ||||
| hFE(1) | DC Current Gain* | IC=-100mA,VCE=-1V | 250 | 600 | ||||
| hFE(2) | DC Current Gain* | IC=-500mA, VCE=-1V | 40 | |||||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=-500mA,IB=-50mA | 0.7 | V | ||||
| VBE(sat) | Base-Emitter Saturation Voltage | IC=-500mA,IB=-50mA | 1.2 | V | ||||
| fT | Current Gain-Bandwidth Product | IC=-10mA, VCE=-5.0V,f=100MHz | 100 | MHZ |
2410121532_amsem-BC807-40_C7528927.pdf
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