Low gate charge N Channel Enhancement Mode MOSFET A Power microelectronics AP80N03D with 30V rating and trench technology
Key Attributes
Model Number:
AP80N03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 N-channel
Output Capacitance(Coss):
200pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
1.16nF
Gate Charge(Qg):
11.1nC@4.5V
Mfr. Part #:
AP80N03D
Package:
TO-252-3
Product Description
Product Overview
The AP80N03D is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching applications.
Product Attributes
- Brand: APM Microelectronics (implied by context)
- Product ID: AP80N03D
- Technology: Advanced Trench Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| VDS | 30 | V | |||
| ID | 80 | A | |||
| RDS(ON) | VGS=10V | 4.8 | 6 | m | |
| RDS(ON) | VGS=4.5V | 6.5 | 9 | m | |
| Absolute Maximum Ratings | (TC=25 unless otherwise noted) | ||||
| VDS | 30 | V | |||
| VGS | 20 | V | |||
| ID (Continuous, TC=25) | 80 | A | |||
| ID (Continuous, TC=100) | 51 | A | |||
| IDM (Pulsed) | 320 | A | |||
| EAS (Single Pulse Avalanche Energy) | 88 | mJ | |||
| IAS (Single Pulse Avalanche Current) | 42 | A | |||
| PD (Power Dissipation, TC=25) | 54 | W | |||
| PD (Derate above 25) | 0.43 | W/ | |||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| RJA (Thermal Resistance Junction to Ambient) | 62 | /W | |||
| RJC (Thermal Resistance Junction to Case) | 2.3 | /W | |||
| Electrical Characteristics | (TJ=25, unless otherwise noted) | ||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V, ID=250uA | 30 | V | ||
| IDSS (Drain-Source Leakage Current) | VDS=30V, VGS=0V, TJ=25 | 1 | uA | ||
| IDSS (Drain-Source Leakage Current) | VDS=24V, VGS=0V, TJ=125 | 10 | uA | ||
| IGSS (Gate-Source Leakage Current) | VGS=20V, VDS=0V | 100 | nA | ||
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=10V, ID=20A | 4.8 | 6 | m | |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=4.5V, ID=10A | 6.5 | 9 | m | |
| VGS(th) (Gate Threshold Voltage) | VGS=VDS, ID=250uA | 1 | 1.6 | 2.5 | V |
| gfs (Forward Transconductance) | VDS=10V, ID=10A | 18 | S | ||
| Qg (Total Gate Charge) | VDS=15V, VGS=4.5V, ID=20A | 11.1 | nC | ||
| Td(on) (Turn-On Delay Time) | VDD=15V, VGS=10V, RG=3.3, ID=15A | 7.5 | ns | ||
| Tr (Rise Time) | 14.5 | ns | |||
| Td(off) (Turn-Off Delay Time) | 35.2 | ns | |||
| Tf (Fall Time) | 9.6 | ns | |||
| Ciss (Input Capacitance) | VDS=25V, VGS=0V, F=1MHz | 1160 | pF | ||
| Coss (Output Capacitance) | VGS=0V, VDS=0V, F=1MHz | 200 | pF | ||
| Crss (Reverse Transfer Capacitance) | 180 | pF | |||
| Rg (Gate resistance) | 2.5 | ||||
| EAS (Single Pulse Avalanche Energy) | VDD=25V, L=0.1mH, IAS=20A | 20 | mJ | ||
| IS (Continuous Source Current) | VG=VD=0V, Force Current | 80 | A | ||
| ISM (Pulsed Source Current) | 320 | A | |||
| VSD (Diode Forward Voltage) | VGS=0V, IS=1A, TJ=25 | 1 | V | ||
| Applications | |||||
| Battery protection | |||||
| Load switch | |||||
| Uninterruptible power supply | |||||
| Package Marking and Ordering Information | |||||
| Product ID | Pack | Marking | Qty(PCS) | ||
| AP80N03D | TO-252-3L | AP80N03D XXX YYYY | 2500 |
Package Mechanical Data (TO-252)
| Ref | Min. | Typ. | Max. | Inches Min. | Inches Typ. | Inches Max. |
|---|---|---|---|---|---|---|
| A | 2.10 | 0.083 | ||||
| A2 | 0 | 0.66 | 0 | 0.026 | ||
| B | 0.40 | 2.50 | 0.016 | 0.098 | ||
| C | 0.10 | 0.86 | 0.004 | 0.034 | ||
| D | 0.60 | 0.024 | ||||
| E | 6.40 | 9.50 | 10.70 | 0.252 | 0.374 | 0.421 |
| G | 0.374 | 0.421 | 0.015 | 0.017 | ||
| H | 5.90 | 6.30 | 0.232 | 0.248 | ||
| L | 6.80 | 0.268 | ||||
| V1 | 4.47 | 4.67 | 0.176 | 0.184 | ||
| V2 | 1.09 | 1.21 | 0.043 | 0.048 | ||
| L2 | 1.35 | 1.65 | 0.053 | 0.065 | ||
| B2 | 5.18 | 5.48 | 0.204 | 0.216 | ||
| C2 | 0.44 | 0.58 | 0.017 | 0.023 | ||
| D1 | 5.30 | 0.209 | ||||
| E1 | 4.63 | 0.182 |
Reel Specification - TO-252
| Ref | Min. | Typ. | Max. | Inches Min. | Inches Typ. | Inches Max. |
|---|---|---|---|---|---|---|
| W | 15.90 | 16.10 | 0.626 | 0.634 | ||
| E | 1.65 | 1.85 | 0.065 | 0.073 | ||
| F | 7.40 | 7.60 | 0.291 | 0.299 | ||
| D0 | 1.40 | 1.60 | 0.055 | 0.063 | ||
| D1 | 16.10 | 0.634 | ||||
| P0 | 7.90 | 10.45 | 10.60 | 0.311 | 0.411 | 0.417 |
| P1 | 10.45 | 10.55 | 10.60 | 0.411 | 0.415 | 0.417 |
| P2 | 1.65 | 1.75 | 0.065 | 0.069 | ||
| A0 | 1.40 | 1.60 | 0.055 | 0.063 | ||
| B0 | 2.40 | 2.70 | 0.094 | 0.106 | ||
| K0 | 6.90 | 7.10 | 0.272 | 0.280 | ||
| T | 1.90 | 2.10 | 0.075 | 0.083 | ||
| t1 | 0.10 | 0.004 |
2410121532_A-Power-microelectronics-AP80N03D_C3011283.pdf
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