SOT 23 3L Plastic Package P Channel Enhancement Mode Field Effect Transistor ALJ AO3407 for Electronic
Key Attributes
Model Number:
AO3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.6A
RDS(on):
60mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
700pF
Pd - Power Dissipation:
1.5W
Mfr. Part #:
AO3407
Package:
SOT-23-3L
Product Description
Product Overview
This P-Channel Enhancement Mode Field Effect Transistor, manufactured by SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD., is designed for electronic applications. It is encapsulated in a SOT-23-3L plastic package.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Package Type: SOT-23-3L
- Encapsulation: Plastic
- Mode: P-Channel Enhancement Mode
- Transistor Type: Field Effect Transistor
Technical Specifications
| Pin Configuration | Specification | Value |
|---|---|---|
| Pinout | 1 | GATE |
| 2 | SOURCE | |
| 3 | DRAIN | |
| Package Dimensions (Approximate) | A O34 0 7 1.5 W 84 4.6 1.5 55 75 | |
| Maximum Ratings (Ta=25 unless otherwise noted) | [Data not fully specified in input] | |
| Electrical Characteristics (Ta=25 unless otherwise noted) | [Data not fully specified in input] | |
2410121737_ALJ-AO3407_C22751455.pdf
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