Dual NPN Small Signal Transistor amsem BC847BS Suitable for Switching and Audio Frequency Amplifier
Key Attributes
Model Number:
BC847BS
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC847BS
Package:
SOT-363-6L
Product Description
Product Overview
The BC847BS is a dual NPN small signal transistor designed for switching and AF amplifier applications. It features a rugged and reliable construction with epoxy meeting UL 94 V-0 flammability rating and a lead-free, RoHS compliant finish. This device offers excellent performance characteristics for various electronic circuits.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Origin: China
- Certifications: UL 94 V-0 flammability rating, RoHS Compliant
- Device Marking Code: BC847BS 1C
- Package Type: SOT363-6L
- Ordering Information: BC847BS, Tape & Reel, 3000pcs /7 Reel, 8mm tape width, 4mm emboss pitch
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VCBO | Collector-Base Voltage | 50 | V | |||
| VCEO | Collector-Emitter Voltage | 45 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| IC | Collector Current | 200 | mA | |||
| TJ | Junction Temperature | 150 | ||||
| TSTG | Storage Temperature | -55 | 150 | |||
| RJA | Thermal Resistance from Junction to Ambient | 417 | /W | |||
| V(BR)CBO | Collector-base breakdown voltage | Ic=10A,IE=0 | 50 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | Ic=10mA,IB=0 | 45 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A,IC=0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB=30V,IE=0 | 15 | nA | ||
| IEBO | Emitter-Base Cutoff Current | VEB =5V, IC=0 | 100 | nA | ||
| hFE | DC current gain* | VCE=5V,IC=2mA | 200 | 450 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=10mA,IB=0.5mA | 0.25 | V | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=100mA,IB=5mA | 0.65 | V | ||
| VBE(sat) | Base-emitter voltage | IC=10mA,IB=0.5mA | 0.9 | V | ||
| VBE(sat) | Base-emitter voltage | IC=100mA,IB=5mA | 0.7 | V | ||
| VBE | Base-Emitter Voltage | VCE=5V, IC=2mA | 0.58 | 0.665 | 0.7 | V |
| fT | Transition Frequency | VCE=5V, IC=10mA, f=100MHz | 200 | MHz | ||
| Cob | Output Capacitance | VCB=10V, IE=0, f=1MHz | 2 | pF |
2410121503_amsem-BC847BS_C7528937.pdf
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