Compact SOT23 6L Full Bridge Rectifier Driver Chip Bardeen Micro BDP3HV2LI for AC to DC Applications

Key Attributes
Model Number: BDP3HV2LI
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Type:
Single-Phase Rectifier
Reverse Leakage Current (Ir):
1uA
Mfr. Part #:
BDP3HV2LI
Package:
SOT-23-6L
Product Description

Product Overview

The BDP3HV2LI is an AC-to-DC full-bridge rectifier driver chip featuring integrated 20V rated high-voltage N-channel and P-channel MOSFETs. It offers a low typical on-resistance for NMOS (45 m at VGS = 4.5V) and PMOS (90 m at VGS = -4.5V), a low threshold turn-on voltage (typical 0.7V), and flexible application design. Its compact SOT-23-6L package makes it suitable for various AC-to-DC applications, including rectifier bridges, AC charging for handheld devices, and wireless charging.

Product Attributes

  • Brand: BDM (Shenzhen Bardeen Microelectronics CO.,LTD)
  • Product Name: Full-Bridge Rectifier Driver Chip
  • Model: BDP3HV2LI
  • Package Type: SOT-23-6L

Technical Specifications

Parameter Symbol Condition Min Typical Max Unit
Absolute Maximum Ratings (TA=25, unless otherwise specified)
Drain-Source Voltage (N) VDS 20 V
Drain-Source Voltage (P) VDS -20 V
Gate-Source Voltage (N & P) VGS 20 V
Continuous Current (TA =25C, N) ID 3 A
Continuous Current (TA =25C, P) ID -2.5 A
Pulsed Peak Current (N) IDM 9 A
Pulsed Peak Current (P) IDM -8 A
Power Dissipation (TA =25C) PD 1.4 W
Power Dissipation (TA =75C) PD 0.9 W
Storage Temperature Range TJ , TSTG -55 150
Electrical Characteristics (TJ=25, unless otherwise specified)
NMOS Characteristics
Drain-Source Breakdown Voltage BV DSS VGS =0V, ID =250A 20 V
Drain Leakage Current IDSS VDS =20V, VGS =0V 1 A
Gate-Source Leakage Current IGSS VDS =0V, VGS =10V 100 nA
Gate Threshold Voltage VGS(th) VDS =VGS , ID =250A 0.42 0.7 1.2 V
Drain-Source On-State Resistance RDS(ON) VGS =4.5V, ID =3A 45 50 m
Drain-Source On-State Resistance RDS(ON) VGS =2.5V, ID =2.0A 58 65 m
Input Capacitance CISS VDS =10V ,VGS =0V f=1.0MHz 500 pF
Output Capacitance COSS 55 pF
Reverse Transfer Capacitance CRSS 45 pF
Gate Resistance Rg VGS =0V, VDS =0V, f=1.0MHz 3.6 4.9
P-channel Characteristics
Drain-Source Breakdown Voltage BV DSS VGS =0V, ID =-250A -20 V
Drain Leakage Current IDSS VDS =-20V, VGS =0V -1 A
Gate-Source Leakage Current IGSS VDS =0V, VGS =10V 100 nA
Turn-on Threshold Voltage VGS(th) VDS =VGS , ID =-250A -0.4 -0.7 -1.0 V
Drain-Source On-State Resistance RDS(ON) VGS =-4.5V, ID =-2.0A 90 120 m
Drain-Source On-State Resistance RDS(ON) VGS =-2.5V, ID =-1.0A 120 160 m
Input Capacitance CISS VDS =-10V ,VGS =0V f=1.0MHz 200 pF
Output Capacitance COSS 35 pF
Reverse Transfer Capacitance CRSS 30 pF
Ordering Information
Order Model Storage Temp Package Specification Marking
BDP3HV2LI -55 to +150 SOT-23-6L 3000pcs/Reel XX3HVX2LI (XX internal code)

Application Scenarios

  • Rectifier Bridge
  • AC charging for handheld devices
  • AC to DC applications
  • Wireless charging

Typical Application

The BDP3HV2LI can be used with the BDP4056 to form a lithium battery charging management circuit that supports AC input. The BDP3HV2LI converts AC to DC, which is then used by the BDP4056 to charge the lithium battery.

Packaging Information

SOT-23-6L

Disclaimer: Shenzhen Bardeen Microelectronics(BDM) CO.,LTD reserves the right to make corrections, modifications, enhancements, improvements, and other changes to its products and to discontinue any product without notice at any time. BDM cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a BDM product. No circuit patent licenses are implied.

Contact Information:
Shenzhen Bardeen Microelectronics(BDM) CO.,LTD.
Building B, Unit B616, HuaShengTai Technology Tower, No.36 Hangkong Road, Sanwei Community, Hangcheng Street, Baoan District, Shenzhen
Tel: 86-755-23505821
Website: http://www.bdasic.com


2509101515_Bardeen-Micro--BDP3HV2LI_C51898178.pdf

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