General Purpose Silicon NPN Transistor BLUE ROCKET MMBT5551-B SOT-23 Package High Breakdown Voltage

Name: General Purpose Silicon NPN Transistor BLUE ROCKET MMBT5551-B SOT-23 Package High Breakdown Voltage
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMBT5551-B
Availability: InStock

Key Attributes

Model Number: MMBT5551-B

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

500mW

Transition Frequency(fT):

110MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

600mA

Collector - Emitter Voltage VCEO:

160V

Operating Temperature:

Mfr. Part #:

MMBT5551-B

Package:

SOT-23

Product Description

Product Overview

The MMBT5551 is a silicon NPN transistor housed in a SOT-23 plastic package. It offers high breakdown voltage and serves as a complementary pair to the MMBT5401. This general-purpose transistor is designed for high-voltage amplification applications.

Product Attributes

Brand: Fsb (implied by URL http://www.fsbrec.com)
Package Type: SOT-23 Plastic Package
Transistor Type: Silicon NPN
Complementary Pair: MMBT5401

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	180	V
Collector to Emitter Voltage	VCEO	160	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	600	mA
Base Current	IB	300	mA
Collector Power Dissipation	PC	500	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector Cut-Off Current	ICBO	VCB=180V, IE=0			0.1	A
Emitter Cut-off Current	IEBO	VEB=6.0V, IC=0			0.1	A
DC Current Gain	hFE(1)	VCE=5.0V, IC=10mA	50		400
	hFE(2)	VCE=5.0V, IC=50mA		160
	hFE(3)	VCE=5.0V, IC=1.0mA	40		190
Collector-Emitter Saturation Voltage	VCE(sat)(1)	IC=10mA, IB=1.0mA		0.06	0.15	V
Collector-Emitter Saturation Voltage	VCE(sat)(2)	IC=50mA, IB=5.0mA		0.09	0.3	V
Base-Emitter Saturation Voltage	VBE(sat)(1)	IC=10mA, IB=1.0mA		0.7	1.0	V
Base-Emitter Saturation Voltage	VBE(sat)(2)	IC=50mA, IB=5.0mA		0.8	1.0	V
Base-Emitter Voltage	VBE	VCE=5.0V, IC=10mA		0.68	0.75	V
Transition Frequency	fT	VCE=10V, IC=10mA	50		110	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz		2.2	5.0	pF
Turn-on Time	ton	IC=100mA, IB1=-IB2=10mA			0.3	s
Turn-off Time	toff				0.4	s
Storage Time	tstg				0.2	s

hFE Classifications & Marking

Symbol	hFE Range	Marking
A	50150	HG1A
B	100300	HG1B
C	200400	HG1C

Marking Instructions

Note: H: Company Code, G1: Product Type Code, A: hFE Classification Symbol Code (e.g., HG1A for MMBT5551)

Packaging SPEC.

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (mm)
SOT-23	3,000	10	30,000	6	180,000	78 (Reel), 180120180 (Inner Box), 390385205 (Outer Box)

Temperature Profile for IR Reflow Soldering (Pb-Free)

1. Preheating: 25~150, Time: 60~90 sec.
2. Peak Temp.: 2455, Duration: 50.5 sec.
3. Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

Temperature: 2605, Time: 101 sec.

2410121228_BLUE-ROCKET-MMBT5551-B_C305444.pdf

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