86--136 6733 2386
quality TO-92LM plastic package transistor BLUE ROCKET 2SC2235-Y for audio frequency amplification and driver stage factory
quality TO-92LM plastic package transistor BLUE ROCKET 2SC2235-Y for audio frequency amplification and driver stage factory

TO-92LM plastic package transistor BLUE ROCKET 2SC2235-Y for audio frequency amplification and driver stage

Key Attributes
Model Number: 2SC2235-Y
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
900mW
Transition Frequency(fT):
120MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
120V
Operating Temperature:
-
Mfr. Part #:
2SC2235-Y
Package:
TO-92LM
Product Description

Product Overview

The 2SC2235 is a Silicon NPN transistor housed in a TO-92LM plastic package. It is designed for audio frequency amplification and driver stage applications. This transistor is complementary to the 2SA965. Key features include its complementary nature and suitability for amplification tasks.

Product Attributes

  • Brand: FSB (implied by datasheet URL)
  • Package Type: TO-92LM Plastic Package
  • Complementary to: 2SA965
  • Marking: BR (Company Code), C2235 (Product Type), O/Y (hFE Classifications), **** (Lot No. Code)

Technical Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 120 V
Collector to Emitter Voltage VCEO 120 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current (DC) IC 800 mA
Emitter Current IE -800 mA
Collector Power Dissipation PC 900 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Emitter Breakdown Voltage VCEO IC=10mA IB=0 120 V
Emitter to Base Breakdown Voltage VEBO IE=1.0mA IC=0 5.0 V
Collector Cut-Off Current ICBO VCB=120V IE=0 0.1 A
Emitter Cut-Off Current IEBO VEB=5.0V IC=0 0.1 A
DC Current Gain hFE VCE=5.0V IC=100mA 80 240
Collector to Emitter Saturation Voltage VCE(sat) IC=500mA IB=50mA 1.0 V
Base to Emitter Saturation Voltage VBE VCE=5.0V IC=500mA 1.0 V
Transition Frequency fT VCE=5.0V IC=100mA 120 MHz
Collector output capacitance Cob VCB=10V IE=0 f=1.0MHz 30 pF

Packaging

Bulk Package

  • Package Type: TO-92LM
  • Units/Bag: 1,000
  • Bags/Inner Box: 8
  • Units/Inner Box: 8,000
  • Inner Boxes/Outer Box: 5
  • Units/Outer Box: 40,000
  • Bag Dimension (unit: mm): 135190
  • Inner Box Dimension (unit: mm): 237172102
  • Outer Box Dimension (unit: mm): 560245195

Ammo Package

  • Package Type: TO-92LM
  • Units/tape: 2,500
  • Rows/Inner Box: 1
  • Inner Boxes/Outer Box: 10
  • Units/Outer Box: 25,000
  • Tape Dimension (unit: mm): 32823042
  • Inner Box Dimension (unit: mm): 480346235
  • Outer Box Dimension (unit: mm): 547407268

Soldering Information

Temperature Profile for Dip Soldering (Pb-Free)

  • Preheating: 25~150, Time: 60~90 sec.
  • Peak Temp.: 2555, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

  • Temperature: 2705
  • Time: 101 sec.

2410121234_BLUE-ROCKET-2SC2235-Y_C358546.pdf

Related Products
quality General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage factory
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.