30V N Channel MOSFET SOT23 6 Package Surface Mount Lead Free ASDM6802ZC R from Ascend Semiconductor

Key Attributes
Model Number: ASDM6802ZC-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
2 N-Channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
245pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
-
Mfr. Part #:
ASDM6802ZC-R
Package:
SOT-23-6
Product Description

Product Overview

The ASDM6802ZC is a 30V N-Channel MOSFET from Ascend Semiconductor Co., Ltd., designed for high power and current handling capabilities. It features a surface mount package, specifically the SOT23-6, and is available in a lead-free product option. This MOSFET is suitable for applications such as PWM applications, load switching, and power management.

Product Attributes

  • Brand: Ascend Semiconductor Co., Ltd.
  • Product Type: N-Channel MOSFET
  • Package Type: SOT23-6
  • Lead Free: Yes

Technical Specifications

Specification Value
Model ASDM6802ZC
Voltage - Drain to Source (Vds) 30 V
Rds(on) Max @ Vgs=10V 45 m
Current - Continuous Drain (Id) @ 25C 4.5 A
Package / Case SOT23-6
Mounting Type Surface Mount
Typical Gate Charge (Qg) 24 nC
Typical Gate Threshold Voltage (Vgs(th)) 1.2 V
Typical Input Capacitance (Ciss) 245 pF
Typical Output Capacitance (Coss) 75 pF
Typical Reverse Transfer Capacitance (Crss) 53 pF
Maximum Continuous Drain Current (Id) 4.5 A
Maximum Pulsed Drain Current (Idm) 4.5 A
Maximum Gate Source Voltage (Vgs) ±10 V
Maximum Junction-to-Ambient Thermal Resistance (RthJA) 24 K/W
Maximum Power Dissipation (Pd) 4.5 W
Operating Temperature Range -55C ~ 150C (TJ)
Ordering Number ASDM6802ZC-R
Marking Code H2XX
Packing Quantity 3000/Reel

2410121858_ASDsemi-ASDM6802ZC-R_C2836206.pdf

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